Versum Materials Us, LLC

Air Products and Chemicals, Inc.

Steven Charles Winchester

Xiaobo Shi

Hongjun Zhou

Jo-Ann Theresa Schwartz

John Edward Quincy Hughes

Mark Leonard O'Neill

John Anthony Marsella

Reinaldo Mario Machado

Krishna P Murella

Dnyanesh Chandrakant Tamboli

James Allen Schlueter

Daniel Hernandez Castillo, Ii

Malcolm Grief

Jae Ouk Choo

Laura Ledenbach

Saifi Usmani

Martin Kamau Ngigi Mungai

Andrew J Dodd

Laura Lede Nbach

Ii Daniel Hernandez Castillo

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Composite abrasive particles for chemical mechanical planarization composition and method of use thereof

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof

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Phoenix, AZ, United States of America

Steven Charles Winchester