International Business Machines Corporation

Toppan Printing Co., Ltd.

Steven C Nash

Brian Neal Caldwell

James P Levin

Yuki Fujita

Raymond Walter Jeffer

Joseph L Malenfant, Jr

Jed Hickory Rankin

Thomas Benjamin Faure

Scott Alan Estes

Emily E F Gallagher

Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.

Test pattern layout for test photomask and method for evaluating critical dimension changes

A method and system for photomask pattern generation is provided, and more specifically, a method and system for feature function aware priority printing is provided. The method of printing a photolithographic mask includes fracturing mask design data into write shapes that are multiples of a spot size and passing fractured mask design data to a write tool. Additionally, the method includes writing one or more non-critical shapes according to one or more time-saving rules.

Method and system for feature function aware priority printing

An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.

Low stress electrodeposition of gold for x-ray mask fabrication

Low stress electrodeposition of gold for X-ray mask fabrication

Growing community of inventors

Essex Junction, VT, United States of America

Steven C Nash