Hewlett-packard Development Company, L.p.

Oce Usa, Inc.

Steven C Johnson

Frederick A Perner

Shane R Konsella

Kwesi E Abraham

Arti Shukla

Jessop Dennis

Michael L Rishel

Andrew L Van Brocklin

Thomas C Anthony

Kenneth Kay Smith

Kurt Robert Bengtson

Peter James Fricke

Manoj K Bhattacharyya

Gary M Johnson

Richard Lee Hilton

Anthony Peter Holden

Sarah Morris Brandenberger

Robert G Mejia

Cyrille De Brebisson

Andrew M Spencer

Eric J Luttmann

Andy Van Brocklin

Colin Andrew Stobbs

David H McIntyre

Shahzad Bhatti

Michael Altree

Martin J Marx

Richard D Newman

Raymond A Siuta

Ricardo F Garcia

Jorge L Andujar

Dennis W Hicks

Lisa O'Toole

David Hay

Chris Gyllenskog

Matt Stephenson

Frank Hartmann

Ray Asbury

Object-oriented data storage. A system and method is disclosed for enhanced data storage. A system for object-oriented data storage may comprise an intelligent object editor capable of accessing data content and a destination storage device coupled to the intelligent object editor. The intelligent object editor can link associated information to data content to create a storage object. The storage object can then be stored to the destination storage device.

Data storage system

Methods and apparatuses are disclosed for measuring values of a plurality of memory elements, where the measured values may be indicative of the digital state of a memory element. Calculations may be performed on a plurality of transition-terms associated with the possible transitions in the values between proximate memory elements. The digital state of memory elements may be determined using the calculations performed on the plurality of transition-terms.

Methods and apparatuses for determining the state of a memory element

A storage device includes memory cells each including a magnetic element, where the memory cells include a first memory cell connected between a first voltage and a sense node, and at least second and third memory cells connected in parallel between the sense node and a reference voltage. A sampling circuit is coupled to the sense node, with the sampling circuit configured to receive a first voltage sample corresponding to an original state of the first memory cell, and to store a second voltage sample corresponding to a known state of the first memory cell after the first memory cell has been written to the known state. A differential amplifier compares the first and second voltage samples in their analog forms.

Sensing the state of a storage cell including a magnetic element

A system of networked computers and peripherals and document delivery software which provides a user with a familiar simple user interface to deliver documents to a variety of different destinations. Each document generation device participating in the system is provided with a unified print driver which translates an electronic document into a non-specific or printer independent printer language file and appends to this file a job ticket containing any other rendering characteristics which may not be supported by the printer independent language. This entire file is then transmitted to the system server which analyzes the file, including the rendering characteristics; determines the best output device(s); appends output device specific commands to the general printer language file; and transmits this file to the device(s) for final output.

Automatic network device selection and document delivery system

A system and method for erasing a high-density non-volatile fast memory is presented. In one embodiment the high-density non-volatile fast memory is a modified flash memory having modified flash cells. One embodiment of the system comprises ultra-violet (UV) light windows that permit exposure of the modified flash cells to UV light. The exposure of UV light onto the modified flash cells erases the modified flash cells.

System and method for erasing high-density non-volatile fast memory

One embodiment of the invention is directed to a data processing system that includes an electrical detection circuit to determine whether the electrical power is going from 'on' to 'off,' or changing from &#x201c;off&#x201d; to &#x201c;on;&#x201d; a peripheral device, including a processor to calculate the amount of electrical energy required for the peripheral device to perform a task; a task queue for the peripheral device that can be read to find a task if the electrical power is going from &#x201c;on&#x201d; to &#x201c;off;&#x201d; and a non-volatile memory, including a task queue to store data describing the task if insufficient electrical energy remains available to the peripheral device to complete the task.

Apparatus and method to handle power supply failures for a peripheral device

An Internet print device font distribution method and web site. Font users are visitors to a web site that allows browsing and obtaining of fonts, either individually or in groups. Preferably, purchases are made through the web site, but the method may allow installation of fonts through the web site as a result of other authorizations, e.g., an electronic coupon for visitors or a tie-in to other products, services, and web sites. Web site functions include operating system compatibility matching. The web site obtains configuration information to insure compatibility of a font to a visitor's configuration. Software on the web site downloads, installs and configures fonts on the visitor's print device.

Internet print device font distribution method and web site

An exemplar method for making a resistive memory element generally includes providing a generally plateau-shaped insulating structure, the insulating structure having a first side wall, a second side wall and a central region disposed between the side walls, depositing a first conductive material on the insulating structure, removing the first conductive material from the central region of the insulating structure to form a first conductor on the first side wall of the insulating structure and a second conductor on the second side wall of the insulating structure, depositing anti-fuse material on the first conductive material and on the central region of the insulating structure, and depositing a second conductive material on the anti-fuse material.

Resistive memory for data storage devices

Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.

Magnetic memory device having improved switching characteristics

Resistive memory elements and arrays for data storage devices are disclosed. An exemplar resistive memory element generally has a first conductive structure and a second conductive structure, each of the conductive structures having a width of less than 1&lgr;, anti-fuse material on each conductive structure, and conductive material on the anti-fuse material such that anti-fuse material is interposed between each conductive structure and the conductive material.

One embodiment of the invention is directed to a data processing system that includes an electrical detection circuit to determine whether the electrical power is going from &ldquo;on&rdquo; to &ldquo;off,&rdquo; or changing from &ldquo;off&rdquo; to &ldquo;on;&rdquo; a peripheral device, including a processor to calculate the amount of electrical energy required for the peripheral device to perform a task; a task queue for the peripheral device that can be read to find a task if the electrical power is going from &ldquo;on&rdquo; to &ldquo;off;&rdquo; and a non-volatile memory, including a task queue to store data describing the task if insufficient electrical energy remains available to the peripheral device to complete the task.

The present disclosure relates to a solid-state storage device. In one arrangement, the storage device comprises a memory device comprising one of an atomic resolution storage (ARS) device and a magnetic random access memory (MRAM) device, a controller, and an integral connector that is used to directly connect the storage device to another device.

Direct connect solid-state storage device

Growing community of inventors

Eagle, ID, United States of America

Steven C Johnson