Advanced Micro Devices Corporation

Spansion Llc.

Other

Globalfoundries Inc.

Cypress Semiconductor Corporation

Advance Micro Devices, Inc.

Steven C Avanzino

Suzette Keefe Pangrle

Darrell M Erb

Minh Van Ngo

Diana M Schonauer

Fei Wang

Kai Yang

Sameer S Haddad

Christy Mei-Chu Woo

Rich K Klein

Bharath Rangarajan

Subhash Gupta

Manuj Rathor

Bhanwar Singh

Robin W Cheung

Jeffrey Allan Shields

Scott D Luning

Ramkumar Subramanian

Ming-Ren Lin

Pin-Chin Connie Wang

Kashmir S Sahota

Matthew S Buynoski

Christie Marrian

Amit P Marathe

Christopher F Lyons

Todd P Lukanc

Nicholas H Tripsas

An Chen

Tzu-Ning Fang

Sergey D Lopatin

John Espinoza Sanchez, Jr

Stephen Keetai Park

Zhida Lan

Swaroop Kaza

Khoi A Phan

Cyrus E Tabery

Bryan K Choo

Jacob D Haskell

Richard K Klein

Dongxiang Liao

Larry Yu Wang

James J Xie

Michael Vanbuskirk

Bryan M Tracy

Wai Lo

Kevin Song

Pervaiz Sultan

Angela Tai Hui

Minh Quoc Tran

Hartmut Ruelke

Hamid Partovi

Chun Jiang

Joffre F Bernard

Igor Sokolik

Steven K Park

Qi Xiang

Mark T Ramsbey

Lu You

Richard J Huang

Colin Stewart Bill

Simon S Chan

Roderick Alan Augur

Darin A Chan

Alexander H Nickel

Richard Paul Kingsborough

Peter A Burke

Krishnashree Achuthan

Juri Krieger

Guarionex Morales

Susan H Chen

Craig S Sander

Wen Yu

Jacques J Bertrand

Michael A VanBuskirk

Christy M-c Woo

Ercan Adem

David H Matsumoto

John Sanchez

Yi-Ching Jean Wu

Wei Daisy Cai

Subramanian N Venkatkrishnan

William G Leonard

Johannes Groschopf

Alline F Myers

Jeffery A Shields

Balaji Swaminathan

Alvin M Dangca

Diana M Shonauer

Gerd Marxsen

Christy Mei-Chu Woo De La Girond'arc

Ming-Rin Lin

Steven Douglas Bartlett

Dong-Xiang Liao

Gerd F C Marxsen

James Xie

Kai-Yueh Yang

A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.

Damascene metal-insulator-metal (MIM) device with improved scaleability

In a method of fabricating a metal-insulator-metal (MIM) device, initially, a first electrode is provided. An oxide layer is provided on the first electrode, and a protective layer is provided on the oxide layer. An opening through the protective layer is provided to expose a portion of the oxide layer, and a portion of the first electrode underlying the exposed portion of the oxide layer is oxidized. A second electrode is provided in contact with the exposed portion of the oxide layer. In alternative embodiments, the initially provided oxide layer may be eliminated, and spacers of insulating material may be provided in the opening.

Metal-insualtor-metal (MIM) device and method of formation thereof

Metal-insulator-metal (MIM) device and method of formation thereof

In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.

Diode and resistive memory device structures

The present memory device includes first and second electrodes, first and second insulating layers between the electrodes, the first insulating layer being in contact with the first electrode, the second insulating layer being in contact with the second electrode, and a metal layer between the first and second insulating layers. Further included may be a first oxide layer between and in contact with the first insulating layer and the metal layer, and a second oxide layer between and in contact with the second insulating layer and the metal layer.

Metal-insulator-metal-insulator-metal (MIMIM) memory device

An electronic device includes a first electrode, a second electrode and an insulating layer between the first and second electrodes, which insulating layer may be susceptible to reduction by H. A gettering layer is provided on and in contact with the first electrode, the gettering layer acting as a protective layer for substantially avoiding reduction of the insulating layer by capturing and immobilizing H. A glue layer may be provided between the gettering layer and first electrode. An additional gettering layer may be provided on and in contact with the second electrode, and a glue layer may be provided between the second electrode and additional gettering layer.

Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device

The present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening in the dielectric layer, providing a switching body in the opening, and providing a second conductive body in the opening.

Damascene metal-insulator-metal (MIM) device

In the present electronic test structure comprising, a conductor is provided, overlying a substrate. An electronic device overlies a portion of the conductor and includes a first electrode connected to the conductor, a second electrode, and an insulating layer between the first and second electrodes. A portion of the conductor is exposed for access thereto.

Test structures for development of metal-insulator-metal (MIM) devices

The present memory device include first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second and into which ions from the passive layer may be provided, and from which the ions may be provided into the passive layer. The active layer is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone.

Memory device with improved data retention

The present memory device include first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes and into which ions from the passive layer may be provided, and from which the ions may be provided into the passive layer. The active layer is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone.

The present method of fabricating a resistive memory device includes the steps of providing a first electrode, oxidizing a portion of the first electrode with an oxidizing agent, providing a metal body on the oxidized portion of the first electrode, oxidizing the entire metal body with an oxidizing agent, and providing a second electrode on the oxidized metal body.

Method to prevent alloy formation when forming layered metal oxides by metal oxidation

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Cupertino, CA, United States of America

Steven C Avanzino