International Business Machines Corporation

Steven B Gold

Jung H Yoon

Feng Xue

Wen Wei Low

Yvonne Chii Yeo

Robert Paul Katz

Gregory S Boettcher

Gabriel V Moore

A computer-implemented method modifies a manufacturing process for integrated circuits that include memory chips and a memory buffer. One or more processors identify a performance trending estimate of memory chip failures versus memory buffer failures in failed integrated circuits. The processor(s) identify a location and address of each memory chip in the identified failed integrated circuits that has a memory chip failure. The processor(s) identify a wafer location on a wafer die on which each memory buffer that has a memory buffer failure was formed. The processor(s) predict a fault analysis (FA) pareto based on the performance trending estimate, the location and address of each memory chip in the failed integrated circuits, and the wafer location on the wafer die on which each memory buffer that has the memory buffer failure was formed such that a manufacturing process for the integrated circuits is modified based on the FA pareto.

Modifying a manufacturing process of integrated circuits based on large scale quality performance prediction and optimization

A computer-implemented method modifies a manufacturing process for integrated circuits. One or more processors receive sensor readings that identify failed integrated circuits from a batch of integrated circuits, where each of the integrated circuits includes a set of dynamic random access memory (DRAM) chips and a memory buffer, where the memory buffer provides an interface between a memory controller and the DRAM chips. The processor(s) identify, based on the sensor readings, a performance trending estimate of DRAM failures versus memory buffer failures in the identified failed integrated circuits. The processor(s) predict a fault analysis (FA) pareto based on the performance trending estimate, a location and address of each DRAM in the identified failed integrated circuits, and a wafer location on the wafer die on which each memory buffer that has the memory buffer failure, such that a manufacturing process for the integrated circuits is modified based on the FA pareto.

An in-situ wear indicator for detecting wear to at least one selected part in a semiconductor manufacturing environment. The indicator is manufactured in a selected material with a selected thickness so that the indicator degrades upon exposure to the semiconductor manufacturing process at a fixed rate relative to the wear of the selected part. The indicator displays a visual indication of wear which is discernible by an automated detection device.

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Wappingers Falls, NY, United States of America

Steven B Gold