Other

Osram Opto Semiconductors Gmbh

Universidad Politécnica De Madrid

Steven Albert

Martin Mandl

Martin Straβburg

Christopher Kölper

Martin Straßburg

Amalia Luisa Fernando Saavedra

Mengyao Xie

David López-romero Moraleda

Enrique Calleja-Pardo

Enrique Calleja Pardo

Ana María Bengoechea Encabo

Ana Maria Bengoechea Encabo

Miguel Angel Sánchez García

Miguel Angel Sanchez-Garcia

The disclosure is aimed at a method for obtaining non-polar III-Nitride compact layers by coalescence of an ordered-array of etched non-polar 111-Nitride nanopillars. Besides, the disclosure also relates to the non-polar III-Nitride binary and ternary compact, continuous (2D) films, layers, or pseudo-substrates, obtainable by means of the disclosed method and having advantageous properties. The disclosure also includes a specific group of non-polar III-Nitride compact, continuous (2D) films or layers, having one of the components selected from the group consisting of In, Al and both elements, enfolding ordered arrays of non-polar III-Nitride nano-crystals, regardless the method for obtaining thereof, said film or layer being one of the groups consisting of: non-polar InN, non-polar AlN, non-polar GaAlN, non-polar InAlN and non-polar GaxInN, where 0<x<1.

Non-polar III-nitride binary and ternary materials, method for obtaining thereof and uses

A light-emitting diode chip comprising:&#x2014;a semiconductor body () having a plurality of active regions (), wherein&#x2014;at least one of the active regions () has at least two subregions (),&#x2014;the active region () has at least one barrier region () arranged between two adjacent subregions () of said at least two subregions (),&#x2014;the at least two subregions () emit light of mutually different colour during operation of the light-emitting diode chip,&#x2014;in at least one of the subregions () the emission of light is generated electrically, and&#x2014;the barrier region () is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (), is specified.

Light-emitting diode chip

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Madrid, Spain

Steven Albert