Applied Materials, Inc.

Paypal, Inc.

Other

Ebay, Incorporated

Steven Aihua Chen

Henry Ho

Lee Luo

Shulin Wang

Sanjay Pundlkrao Ghatare

Hugo Olliphant

Yu Wen Chang

Muhammad Faisal Rehman

Rami El-Charif

Olivier G Dumon

Franck Chastagnol

Peter Zhe Chu

Xianzhi Tao

Michael Xiaoxuan Yang

Karl Anthony Littau

Ming Xi

Chen-An Chen

Errol C Sanchez

Kegang Huang

Guanglei Song

Bruce W Peuse

William Wu

Li Fu

Yi-Ling Su

Chris Brown

Thach Dang

Thomas Veino

Carol Gunby

Mei Yin Chang

Vijay D Parkhe

Ruiping Wang

Sergio Edelstein

Alexander Tam

Sang H Ahn

Aaron Kwong Yue Lee

Xiaoliang Jin

Kuan-Ting Lin

Hung-Chuan Chen

Binh Hoa Tran

Chiliang L Chen

Tzy-Tzan Fu

Luo Lee

Errol A C Sanchez

Zoran Dragojlovic

Kuo-Chun Wu

Guanglie Song

Wendy Billman

A system and method to associate an electronic gift certificate with a payment services account to cause presentation of the electronic gift certificate based on meeting a predetermined condition. A gift certificate is purchased on-line and associated with a recipient's payment services account by the electronic gift certificate purchaser. A graphical user interface representing the payment services account of the recipient is presented with a record of the electronic gift certificate in a hidden state within the payment services account. Determining the predetermined condition is met, unmarking the record of the electronic gift certificate and causing presentation of a gift certificate button within the user interface representing the payment services account.

Presenting previously hidden user interface options within a graphical user interface

A method and system for facilitating online payments are disclosed. According to one aspect of the present invention, a payment agreement is established at a payment service provider that defines terms of a payment relationship between a merchant and a user. The establishing of the payment agreement includes linking the payment agreement with a payment account of the merchant or user stored at the payment service provider. After establishing the payment agreement, a payment request associated with a transaction is received, whereby the payment request includes a unique identifier to identify the payment agreement stored at the payment service provider. Based on a verification that the payment request complies with terms of the payment agreement, the payment request is processed.

Method and system for facilitating online payments based on an established payment agreement

Methods and systems for simulating a search, for the purpose of evaluating one or more scoring functions used in ordering item listings for presentation in a search results page are described. Consistent with some embodiments, a simulation platform includes a real-time simulation module that receives search result sets for search queries that result in the conclusion of a transaction. The result set is then processed by the simulation platform with one or more test scoring functions, such that the resulting position of the item listing that has resulted in the transaction can be compared with the actual position at which the item listing was displayed in the actual search results. For each test scoring function, an average rank shift metric is determined, and displayed, thereby providing a metric with which to base decisions about which scoring functions to use in the production system.

Methods and systems for selecting an optimized scoring function for use in ranking item listings presented in search results

Methods and systems for deriving a scoring function, for use in ordering a set of search results, are described. Consistent with some embodiments, a simulation platform includes an offline simulator module that receives search result sets for search queries that result in the conclusion of a transaction. The result set is then processed by the offline simulation platform to derive a set of weighting factors for use with one or more parameters in a parametric scoring function. The weighting factors are determined, for example, by specifying an equation setting one or more constraints and then solving the equation for the weighting factors.

Methods and systems for simulating a search to generate an optimized scoring function

A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

Bi-layer silicon film and method of fabrication

An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

Emissivity-change-free pumping plate kit in a single wafer chamber

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

Multi-zone resistive heater

Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

The invention provides a method of making a transistor. A gate dielectric layer is formed on a semiconductor substrate. A gate is formed on the dielectric layer, the gate having an exposed upper surface and exposed side surfaces. A first silicon nitride layer having a first thickness is deposited over the gate, for example over an oxide layer on the gate, at a first deposition rate. A second silicon nitride layer having a second thickness is deposited over the first silicon nitride layer at a second deposition rate, the second thickness being more that the first thickness and the second deposition rate being more than the first deposition rate. The first silicon nitrogen layer then has a lower hydrogen concentration. At least the second silicon nitride layer (or a silicon oxide layer in the case of an ONO spacer) is etched to leave spacers next to the side surfaces while exposing the upper surface of the gate and areas of the substrate outside the spacers.

Method of making a transistor, in particular spacers of the transistor

A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.

Doped silicon deposition process in resistively heated single wafer chamber

A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500&deg; C., and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.

Method of forming a silicon nitride layer on a substrate

A semiconductor processing system includes a semiconductor processing chamber constructed of a main body, a window support member, and a window. The window support member is located over an opening into the main body. The window is located over the window support component. At least one radiation passage is formed in the window support component. The radiation passage has a first end which is open to the internal dimensions of the main body and a second end, opposing the first end, which terminates against the window.

Window support member for a semiconductor processing system

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Fremont, CA, United States of America

Steven Aihua Chen