US Government As Represented by the Secretary of the Army

Steven A Malone

Arthur C Paolella

Dana J Sturzebecher

Peter R Herczfeld

Milson Silva

An integrated optical intensity modulator. The modulator is an optical waveguide on a semi-insulating substrate and having a core layer for transmitting an optical signal. The modulator includes contiguous the core layer an active cladding which has a multicoupled quantum well structure. The multicoupled quantum well includes at least one pair of quantum wells separated by a barrier. The modulator further includes first and second additional claddings wherein the core layer and the active cladding are interposed between the additional claddings. A voltage source generates an electric field through the active cladding which varies the refractive index of the active cladding as a function of the strength of the electric field for modulating the optical signal.

Coupled quantum well optical intensity modulator for INP based

A tapered waveguide for transmitting optical signals from a signal source to an optical fiber is fabricated by irradiating a layer of prepolymer resin on a substrate with a converging beam of ultraviolet light, whereby the irradiated resin polymerizes into a clear, hard polymer and the resin that has not been irradiated remains in its resinous state. The unpolymerized resin is removed with an organic solvent. The variation in width of the waveguide is achieved by varying the distance between the source of the converging beam of ultraviolet light, thereby varying the diameter of the spot that is being irradiated, while simultaneously moving the source of ultraviolet light parallel to the axis of the waveguide. Variation in thickness of the waveguide is achieved by sloping the substrate.

Method of forming an improved tapered waveguide by selectively

The present invention utilizes the internal photovoltaic effect of a GaAs SFET to mix an RF modulated optical signal with a microwave signal. As those skilled in the art will readily recognize, a GaAs MESFET generically comprises an n layer of GaAs (channel) deposited on semi-insulating GaAs (substrate). Source, gate and drain electrodes are then formed on the channel with the gate acting as a Schottky barrier. In this standard MESFET, the difference in doping between the channel and substrate produces a potential barrier. It has been found that when the device is illuminated, the potential barrier is reduced in the region between the source and the gate and drain and the gate. This reduced potential barrier allows more drain current to flow from the device. It has been found that this drain current photoresponse is highly non-linear with respect the gate voltage applied to the device and therefore, it may be used to mix RF modulated optical signals with microwave signals. Accordingly, the present invention uses this effect to mix an optical signal directly or indirectly delivered to the MESFET with an RF signal so as to produce an IF signal.

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Eatontown, NJ, United States of America

Steven A Malone