Texas Instruments Corporation

Steven A Henck

Robert M Wallace

Ajit P Paranjpe

Walter Marvin Duncan

Francis Gabriel Celii

Stephanie Watts Butler

Douglas A Webb

Peijun Chen

Marvin Wayne Cowens

S Charles Baber

Douglas L Mahlum

Larry A Taylor

Sonny Maung

A protective cover ( ) for an optical device, such as a spatial light modulator or an infrared detector or receiver. The cover ( ) has an optically transmissive window ( ), which has a coating ( ) on one or both of its surfaces. The coating ( ) is made from a halogenated material, which is deposited to form a chemical bond with the surface of the window ( ).

Fluorinated coating for an optical element

An integrated circuit fabrication process in which residual fluorine contamination on metal surfaces after ashing is removed by exposure to an NH.sub.3 /O.sub.2 plasma.

Low temperature process for post-etch defluoridation of metals

A method of preventing permanent deformation of deflecting metal components of micro mechanical devices, such as hinges (12) of mirror elements (10) of a digital micro mirror device. The hinges (12) are made from a memory metal capable of undergoing austenite/martensite phase transitions. If the device is operated and the hinges (12) become mechanically distorted, the hinges (12) can be heated to cause a transition to the austenite phase and a return to their original shape.

Micro mechanical device with memory metal component

Apparatus and methods for precise processing of thin materials in a process chamber by the use of ellipsometer monitoring is disclosed. The process includes rapidly etching a layer 42 of material covering a semiconductor device. The process includes placing the semiconductor wafer 14 into a processing chamber 10. In a typical operation, the wafer 14 will include a selected substrate 32 having a first thin layer 30 of material covering the substrate 32 and then a second layer 42 of a different material covering the first layer 30. A process such as reactive ion anisotropic etching which rapidly etches the second layer 42 is initiated and this etching is monitored in situ by an ellipsometer in combination with a controller 28 to determine the thickness of the second layer 42' which has been achieved. Once the desired amount of second layer 42 remains, the rapid etching process stops to leave a residual layer 42' such as about 250 .ANG. or in a preferred embodiment a thickness equivalent to about one molecular layer. A second chemical isotropic etching process step then starts which may be substantially ineffective at etching the first layer 30 of material and which etching process consequently is typically substantially slower than the first etching process. Since only a very thin layer remains, the slow speed or isotropic nature of the second etching process does not take an unacceptable amount of time or cause other problems, such as loss of critical dimension.

Method for rapidly etching material on a semiconductor device

A method of preventing adhesion of contacting surfaces of micro-mechanical devices (10). Two materials are selected that are incompatible in the sense that they have at least low solid solubility and preferably, an inability to alloy. One of these materials is used as the first contacting surface (11), and the other as the second contacting surface (17).

Micromechanical device manufactured out of incompatible materials

Use of incompatible materials to eliminate sticking of micro-mechanical

A micro-mechanical device (10) includes relatively movable elements (11, 17) which contact or engage and which thereafter stick or adhere. A perfluoropolyether (PFPE) film (31) is applied to the contacting or engaging portions of the elements (11,17) to ameliorate or eliminate such sticking or adhesion.

PFPE coatings for micro-mechanical devices

In accordance with one aspect of the present invention, a method is provided for predicting the endpoint time of a semiconductor process for a layer of a wafer (14). The endpoint time is the time at which a predetermined thickness of the layer occurs. A layer thickness, calculated for a first sample time, is received. It is then determined whether or not the layer thickness lies within a predetermined range. If the layer thickness does lie within the predetermined range, it is used to update a forecasted process rate. The forecasted process rate is used to predict the endpoint time. The endpoint time is used to control the semiconductor process so that the layer of wafer (14) is formed having the predetermined thickness.

Method and apparatus for process endpoint prediction based on actual

A direct, noncontact temperature sensor includes an ellipsometer (104-106) to determine absorptance for layered structures and a pyrometer (102) to determine emissive power and combines the two measurements to determine temperature.

Temperature sensor and method

An interferonmetric temperature measurement system is described for determining the temperature of a sample. The system comprises three detectors for measuring various intensities of a beam of electromagnetic radiation reflected off the sample and circuitry for determining the temperature from the intensities. The detectors measure the intensity of the beam and two orthogonally polarized components of the beam.

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Plano, TX, United States of America

Steven A Henck