Kla Tencor Corporation

Kla-tencor Technologies Corporation

Kla Corporation

Steve Yifeng Cui

Gary Janik

Robert M Danen

Jamie Michael Sullivan

Grace Hsiu-Ling Chen

Qiang Q Zhang

Wenjian Cai

Rex Runyon

Mikhail Haurylau

Dieter Wilk

Meier Yitzhak Brender

Steve Short

Suwipin Martono

Shobhit Verma

Stephen Biellak

Anatoly Romanovsky

Shouhong Tang

Jianou Shi

Shiyou Pei

Zhiwei Xu

Bret Whiteside

Kurt Lindsay Haller

Zhiwei (Steve) Xu

Jie-Fei Zheng

An Andrew Zeng

Mandar Paranjape

Million Daniel

Nadine Asenbaum-Doerre

Jared Lera

Jeff Chen

Haiyong (Howard) Wang

A laser-beam power-modulation system includes an acousto-optic modulator (AOM) to receive a laser beam and separate the laser beam into a primary beam and a plurality of diffracted beams based on an input signal. The power of the primary beam depends on the input signal. The system also includes a slit to transmit the primary beam and dump the plurality of diffracted beams, a controller to generate a control signal based at least in part on feedback indicative of the power of the primary beam or the power of a beam generated using the primary beam, and a driver to generate the input signal based at least in part on the control signal.

Laser closed power loop with an acousto-optic modulator for power modulation

Systems, methods, and apparatuses are disclosed herein for directing, using an optical arrangement including one or more lenses, a main beam and a leading beam toward a specimen such that the main beam is incident on the specimen at a main beam incidence and the leading beam is incident on the specimen at a leading beam incidence. The main beam intensity is greater than a leading beam intensity of the leading beam. A TDI sensor receives electromagnetic radiation from the leading beam incidence, thereby generating a first accumulated charge portion, and receives electromagnetic radiation from the main beam incidence, thereby generating a second accumulated charge portion. A processor maps the first accumulated charge portion to a first FOV, thereby yielding leading beam data, and maps the second accumulated charge portion to a second FOV, thereby yielding main beam data.

Systems and methods for advanced defect ablation protection

An inspection system with selectable apodization includes a selectably configurable apodization device disposed along an optical pathway of an optical system. The apodization device includes one or more apodization elements operatively coupled to one or more actuation stages. The one or more actuation stages are configured to selectably actuate the one or more apodization elements along one or more directions. The inspection system includes a control system communicatively coupled to the one or more actuation stages. The control system is configured to selectably control an actuation state of at the one or more apodization elements so as to apply a selected apodization profile formed with the one or more apodization elements.

System and method for apodization in a semiconductor device inspection system

An inspection system with selectable apodization includes an illumination source configured to illuminate a surface of a sample, a detector configured to detect at least a portion of light emanating from the surface of the sample, the illumination source and the detector being optically coupled via an optical pathway of an optical system, a selectably configurable apodization device disposed along the optical pathway, wherein the apodization device includes one or more apodization elements operatively coupled to one or more actuation stages configured to selectably actuate the one or more apodization elements along one or more directions, and a control system communicatively coupled to the one or more actuation and configured to selectably control apodization of illumination transmitted along the optical pathway by controlling an actuation state of the one or more apodization elements.

The disclosure is directed to focusing one or more detectors of an interferometry system. An initial focus position may be determined by focusing a detector on an edge of a sample by comparing image contrast of intensity frames collected by the detector. Data associated with an inner edge of a ring formed by the image of the sample reflected on a reference flat may be collected from one or more positions near the initial focus position. The detector can be focused to a selected position by comparing edge data collected at the various detector positions near the initial focus position.

Focusing detector of an interferometry system

Disclosed herein is a method and system for providing environmental control for a vibration sensitive system such as an interferometric measurement system, while minimizing acoustic noise during data acquisition.

Method and apparatus for improving the temperature stability and minimizing the noise of the environment that encloses an interferometric measuring system

Systems and methods for inspecting an edge of a specimen are provided. One system includes an illumination subsystem configured to direct light to the edge of the specimen at an oblique angle of incidence. The plane of incidence of the light is substantially perpendicular to a plane substantially tangent to the edge of the specimen. The system also includes a detection subsystem configured to collect light scattered from the edge and to generate signals responsive to the scattered light. One method includes directing light to the edge of the specimen at an oblique angle of incidence. The plane of incidence is substantially perpendicular to a plane substantially tangent to the edge of the specimen. The method also includes collecting light scattered from the edge and generating signals responsive to the scattered light. The signals described above can be used to detect defects on the edge of the specimen.

Systems and methods for inspecting an edge of a specimen

Non-contact methods for determining a parameter of an insulating film are provided. One method includes measuring at least two surface voltages of the insulating film. The surface voltages are measured after different charge depositions. Measuring the surface voltages is performed in two or more sequences. The method also includes determining individual parameters for the two or more sequences from the surface voltages and the charge depositions. In addition, the method includes determining the parameter of the insulating film as an average of the individual parameters. The parameter is substantially independent of leakage in the insulating film. Another method includes determining a characteristic of nitrogen in an insulating film using two parameters of the insulating film selected from equivalent oxide thickness, optical thickness, and a measure of leakage through the insulating film. The characteristic may be a nitrogen dose, a nitrogen percentage, or a presence of nitrogen in the insulating film.

Non-contact methods for measuring electrical thickness and determining nitrogen content of insulating films

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Fremont, CA, United States of America

Steve Yifeng Cui