University of California

Applied Materials, Inc.

Steve Wolf

Naomi Yoshida

Andrew C Kummel

Lin Dong

Jessica Sevanne Kachian

Mary Edmonds

Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation of an atomic layer deposition (ALD) control layer as a diffusion barrier or gate dielectric layer and subsequent ALD processing. Embodiments described herein are believed to be advantageously utilized concerning gate oxide deposition, diffusion barrier deposition, surface functionalization, surface passivation, and oxide nucleation, among other processes. More specifically, embodiments described herein provide for silicon nitride ALD processes which functionalize, passivate, and nucleate a SiNmonolayer at temperatures below about 300&#xb0; C.

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San Diego, CA, United States of America

Steve Wolf