Applied Materials, Inc.

Steve Sansoni

Vijay D Parkhe

Wei W Wang

Karl M Brown

Vineet Haresh Mehta

Cheng-Hsiung Matt Tsai

Semyon Sherstinsky

Allen K Lau

Kurt J Ahmann

Matthew C Tsai

Xiaoxiong Yuan

See-Eng Phan

Nitin Khurana

Yuanhong Guo

Eugene Tzou

Sheng Michael Guo

Marek W Radko

Yuji Murayama

Pingping Gou

Vince Burkhart

Song-Moon Suh

Muhammad M Rasheed

Keith A Miller

Alan A Ritchie

Donny Young

Uday Pai

Nora Arellano

A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

Remote plasma cleaning of chambers for electronics manufacturing systems

A cooling pedestal for supporting a substrate, comprises a support structure having cooling conduits to flow a fluid therethrough to cool the substrate, and a contact surface comprising a coating of a diamond-like carbon. The coating comprises (i) a coefficient of friction of less than about 0.3, (ii) an average surface roughness of less than about 0.4 micrometers, and (iii) a microhardness of at least about 8 GPa.

Cooling pedestal with coating of diamond-like carbon

A substrate heat exchange pedestal comprises: (i) a support structure having a contact surface comprising a coating of a diamond-like material, and (ii) a heat exchanger in the support structure, the heat exchanger capable of heating or cooling a substrate.

Heat exchange pedestal with coating of diamond-like material

In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Apparatus for enabling concentricity of plasma dark space

A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.

Detachable electrostatic chuck for supporting a substrate in a process chamber

A substrate support has a support structure and a coating on the support structure having a carbon-hydrogen network. The coating has a contact surface having a coefficient of friction of less than about 0.3 and a hardness of at least about 8 GPa. The contact surface of the coating is capable of reducing abrasion and contamination of a substrate that contacts the contact surface. In one version, the support structure has a dielectric covering an electrode. A plurality of mesas on the dielectric have a coating with the contact surface thereon.

Coating for reducing contamination of substrates during processing

An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.

Detachable electrostatic chuck

A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etchinq the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

Method and apparatus for sputter etch conditioning a ceramic body

A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etching the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

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Livermore, CA, United States of America

Steve Sansoni