Texas Instruments Corporation

United States of America As Represented by the Secretary of the Air Force

Steve S Huang

Cecil J Davis

Lee M Loewenstein

Ajit P Paranjpe

Rhett B Jucha

Mehrdad M Moslehi

Robert T Matthews

Ming J Hwang

Thomas E Tang

Habib N Najm

Rachelle J Bienstock

Jeff D Achenbach

A plasma density monitor is described for determining the ion current of a plasma flowing through a conduit (14). The monitor comprises a plate (18) having a face and an orifice extending from the face through the plate. The internal surface of the orifice conforms with the internal surface of the conduit when the face is adjacent the conduit. The monitor also comprises a detector circuit (22) for sensing the ion current collected by the internal surface of the plate (18). Another embodiment monitors plasma density by determining electrical conductivity in the afterglow of a microwave induced plasma. A resonant LC circuit (50, C3) has a multi-turn coil (C3) surrounding the conduit, an RF oscillator circuit (54, 56) for driving the LC circuit, and a circuit (64, 66, 68, 70, 72, 76) for measuring the decay time of the LC circuit. Plasma flowing through the conduit alters the resistivity of the coil and the time constant of the LC circuit proportional to the electrical conductivity of the flowing plasma.

Plasma density monitor and method

A surfatron 12 is provided which includes first waveguide 32 coupled to a section of coaxial waveguide 30 to define a cavity 28 at the intersection therebetween. The coaxial waveguide 30 includes an outer cylinder 36 and an inner cylinder 34 disposed within the outer cylinder 36. Inner cylinder 34 has an end disposed proximate to a wall of first section of waveguide 32. A space 40 is defined between the end of inner cylinder 34 and the wall of waveguide 32. A discharge tube 22 is provided having a first portion disposed within inner cylinder 34 and a second portion extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32. A coil 38 is disposed around the portion of discharge tube 22 extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32.

Plasma processing system using surface wave plasma generating apparatus

A thin reflective cylindrical baffle [20] in a radiant lamp heater is provided in the space below a plurality of heating bulbs [2,4,6] (arranged in a center position and around a middle and outer ring) and above a quartz window [12]. The baffle diameter is such that it fits within the annular space between the middle [4] and outer [6]ring of bulbs. The baffle which blocks a predetermined amount of light generated by the lamp bulbs [20] allows improved controllability of wafer temperature profile--for a wafer heated by a radiant lamp heater.

Semiconductor wafer heater with infrared lamp module with light blocking

A remote microwave plasma generator comprises the combination of two parts, a tunable microwave applicator, and a double wall, water cooled quartz/sapphire tube. The tunable waveguide applicator is a nonconducting adjustable waveguide short with a quartz/sapphire tube inserted through it. The adjustable end is one quarter of a guide wavelength from the center line of the tube, and the other side is 0.1 inches less in distance, thus permitting the applicator to be used with a triple stub tuner for optimum coupling.

Low particulate reliability enhanced remote microwave plasma discharge

A method and apparatus for sensing radiation 26 indicative of at least one process variable in a semiconductor process chamber 10 in which a reactant gas reacts to effect changes in a silicon wafer 12. The method comprises positioning a substantially transparent window 22 in a conduit 14 leading to the wafer 12 and then flowing the reactant gas in the conduit 14 past the window 22 and toward the wafer 12. The radiation 26 is then sensed through the window 22. In the preferred embodiment the window 22 is positioned with an optical path along the center axis of the conduit 14. Other systems and methods are also disclosed.

Method and apparatus for integrating optical sensor into processor

A distributed electron cyclotron resonance remote plasma processing apparatus and method which includes generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally around, remote from the wafer processing chamber and in fluid communication with the main transfer chamber; containing the activated species using a microwave gas discharge and a magnetic field in the plasma formation regions; introducing the plasma streams to the main transfer chamber; creating a magnetic mirror in the main transfer chamber using a magnetic field; and introducing the species to the process chamber and to a face of the workpiece. Such an apparatus could use multiple energy/excitation sources.

Distributed ECR remote plasma processing and apparatus

An apparatus and a method for the etching of semiconductor materials is disclosed. The apparatus includes a process chamber which includes a plasma generator remote from and in fluid communication with the process chamber. The remote plasma generator includes an inlet tube, a discharge tube in fluid communication with the inlet tube, an excitation cavity surrounding the discharge tube, an outlet tube in fluid communication with the discharge tube and a process chamber, and an injection tube in the outlet tube.

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Richardson, TX, United States of America

Steve S Huang