Micrel, Incorporated

Steve McCormack

Ji-Hyoung Yoo

Martin E Garnett

Peter Zhang

A lateral double-diffused metal oxide semiconductor (LDMOS) device is disclosed. The LDMOS device comprises a gate region and a body region under the gate region. The LDMOS device includes an enhanced drift region under the gate region. The enhanced drift region touches the body region. By designing the device such that the enhanced drift region overlaps and compensates the lateral tail of the body region of the LDMOS transistor, the Ron*area product is reduced. Accordingly, the on-resistance is significantly reduced while minimally affecting the breakdown voltage of the device.

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A method for fabricating a bipolar transistor includes forming a first region of a first conductivity type in a semiconductor structure to form a collector region and forming a second region of a second conductivity type in the first region to form a base region. A first mask is applied including an opening defining an emitter region of the bipolar transistor. The method further includes a triple implantation process using the first mask. Thus, a third region of the first conductivity type is formed in the first region and overlaid the second region. A fourth region of the second conductivity type is formed in the second region and is more heavily doped than the second region. A fifth region of the first conductivity type is formed in the second region and above the fourth region. The fifth region forms the emitter region of the bipolar transistor.

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Cupertino, CA, United States of America

Steve McCormack