National Semiconductor Corporation

Steve M Leibiger

Ali A Iranmanesh

Christopher S Blair

Rick C Jerome

Vida Ilderem

Alan G Solheim

George E Ganschow

Madan Biswal

Rajeeva Lahri

Bamdad Bastani

Bancherd DeLong

James L Bouknight

Tad Davies

A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for sub-micron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.

Reducing base resistance of a BJT by forming a self aligned silicide in

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Graham, WA, United States of America

Steve M Leibiger