Semitool, Inc.

Steve L Eudy

Gregory J Wilson

Thomas Lee Ritzdorf

Daniel J Woodruff

Paul R McHugh

Randy Harris

Kyle Moran Hanson

Thomas H Oberlitner

James J Erickson

Matthew C Egloff

Curtis A Weber

Tim McGlenn

Timothy A Anderson

Paul Zachary Wirth

Steven L Peace

Robert Allen Weaver

John M Pedersen

Nolan Layne Zimmerman

Curt T Dundas

Brian Aegerter

Daniel P Bexten

A wafer processing system has a wafer loading system accommodating sufficient wafer carriers to substantially maximize the processing speed capability of the processing system. Wafer carriers are placed into and removed from the loading system by one or two overhead carrier loading tracks. Carriers may be loaded or removed while other carriers are in work. One or more transfer robots may move wafers from the carriers to buffers. One or more process robots in a process module move wafers from buffers, or other locations, to processors in the process module.

High throughput semiconductor wafer processing

Although there are several inventions disclosed herein, the present application is directed to a reactor for electrochemically processing a microelectronic workpiece. The reactor comprises a movable electrode assembly that is disposed for movement along a motion path. The motion path includes at least a portion thereof over which the electrode assembly is positioned for processing at least one surface of the microelectronic workpiece. A cleaning electrode is located along the motion path of the movable electrode assembly. In one embodiment, a programmable controller is connected to direct the movable electrode assembly to move to the cleaning electrode during a cleaning cycle. At that time, the programmable controller connects the movable electrode assembly as an anode and the cleaning electrode as a cathode for cleaning of the movable electrode assembly. The cleaning electrode may be disposed along a position of the motion path that is beyond the range of motion required to process the microelectronic workpiece so that the programmable controller may be programmed to conduct a cleaning cycle while a microelectronic workpiece is present in the reactor for processing.

Processing apparatus including a reactor for electrochemically etching microelectronic workpiece

Contact assemblies for electrochemical processing of microelectronic workpieces. The contact assembly () can comprise a support member () that includes an inner wall () which defines an opening () configured to receive the workpiece and a plurality of contacts (). The individual contacts () include a conductor () and a cover (). The conductor () can comprise a proximal section () projecting inwardly into the opening () relative to the support member (), a distal section () extending from the proximal section (), and an inert exterior () at least at the distal section (). The cover () comprises a dielectric element that covers at least the proximal section of the conductor, but does not cover at least a portion of the distal section of the core. The exposed portion of the distal section of the core, accordingly, defines a conductive contact site for contacting a conductive layer (e.g., a seed layer) on the workpiece.

Contact assemblies for electrochemical processing of microelectronic workpieces and method of making thereof

A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.

Apparatus and method for processing a microelectronic workpiece using metrology

A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.

Methods and apparatus for processing microelectronic workpieces using metrology

Contact assemblies for electrochemical processing of microelectronic workpieces. The contact assemblies can comprise a support member that includes an inner wall which defines an opening configured to receive the workpiece and a plurality of contacts. The individual contacts include a conductor and a cover. The conductor can comprise a proximal section projecting inwardly into the opening relative to the support member, a distal section extending from the proximal section, and an inert exterior at least at the distal section. The cover comprises a dielectric element that covers at least the proximal section of the conductor, but does not cover at least a portion of the distal section of the core. The exposed portion of the distal section of the core, accordingly, defines a conductive contact site for contacting a conductive layer (e.g., a seed layer) on the workpiece.

Contact assemblies, methods for making contact assemblies, and machines with contact assemblies for electrochemical processing of microelectronic workpieces

Processing tools, components of tools, and methods of making and using such devices for electrochemical processing of microelectronic workpieces. One aspect of the invention is directed toward reaction vessels for electrochemical processing of microelectronic workpieces, processing stations including such reaction vessels, and methods for using these devices. For example, one embodiment of a reaction vessel includes an outer container having an outer wall, a first outlet configured to introduce a primary fluid flow into the outer container, and at least one second outlet configured to introduce a secondary fluid flow into the outer container separate from the primary fluid flow. The reaction vessel can also include at least one electrode, and it can also have a field shaping unit. The field shaping unit, for example, can be a dielectric assembly coupled to the second outlet to receive the secondary flow and configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container. The field shaping unit can also have at least one electrode compartment through which the secondary flow can pass separately from the primary flow. The electrode is positioned in the electrode compartment.

Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces

An electrochemical processing chamber which can be modified for treating different workpieces and methods for so modifying electrochemical processing chambers. In one particular embodiment, an electrochemical processing chamberincludes a plurality of wallsdefining a plurality of electrode compartments, each electrode compartment having at least one electrodetherein, and a virtual electrode unitdefining a plurality of flow conduits, with at least one of the flow conduits being in fluid communication with each of the electrode compartments. This first virtual electrode unitmay be exchanged for a second virtual electrode unit, without modification of any of the electrodes, to adapt the processing chamberfor treating a different workpiece.

Adaptable electrochemical processing chamber

Processing apparatus including a reactor for electrochemically etching a microelectronic workpiece

An apparatus and method for processing microelectronic workpieces. The apparatus can include a housing at least partially enclosing a process environment, with a first processing chamber and a second processing chamber positioned within the housing. The first processing chamber can have a first electrically powered device, such as a first anode and/or a first cathode, and the second processing chamber can have a second electrically powered device, such as a second anode and/or a second cathode. A first power supply is electrically coupled to the first processing chamber to provide electrical power to at least one of a first anode and a first cathode, and a second power supply is electrically coupled to the second processing chamber to provide electrical power to at least one of the second anode and the second cathode. A first conductive link between the first power supply and the first processing chamber can be electrically decoupled from a second conductive link between the second power supply and the second processing chamber. The conductive links can have the same impedance, resistance, and/or length.

Distributed power supplies for microelectronic workpiece processing tools

An electrochemical processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. An electrochemical deposition unit provides a space to receive said microelectronic workpiece to deposit a subsequent film layer onto a prior layer, wherein a condition signal from the metrology unit influences the process control of the electrochemical deposition unit. The signal can also be used to transfer the microelectronic workpiece to a layer stripping unit, or a layer enhancement unit, or to a non-compliance station. The apparatus is particularly useful in measuring seed layer thickness and adjusting the operating control of a computational fluid dynamic reactor, which electroplates a process layer onto the seed layer.

Growing community of inventors

Kalispell, MT, United States of America

Steve L Eudy