Applied Materials, Inc.

Appiled Materials, Inc.

Steve H Chiao

Wei Ti Lee

Salvador P Umotoy

Anh Ngoc Nguyen

Lawrence C Lei

Alan A Ritchie

Ted Tie Guo

Lawrence Chung-Lai Lei

Joel M Huston

James J Chen

Be Van Vo

A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.

Gas line weldment design and process for CVD aluminum

Embodiments of the invention provide an apparatus for generating a precursor gas used in a vapor deposition process system. The apparatus contains a canister or an ampoule for containing a chemical precursor and a splash guard contained within the ampoule. The splash guard is positioned to obstruct the chemical precursor in a liquid state from being bumped or splashed into a gas outlet during the introduction of a carrier gas into the ampoule. The carrier gas is usually directed into the ampoule through a gas inlet and combines with the vaporized chemical precursor to form a precursor gas. The splash guard is also positioned to permit the passage of the precursor gas from the gas outlet. In one example, the gas outlet contains a stem with a tapered tip and the splash guard is positioned at an angle parallel to the plane of the tapered tip.

Ampoule splash guard apparatus

An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700&deg; C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250&deg; C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65&deg; C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200&deg; C. to minimize undesirable deposits on the interior surfaces of the exhaust assembly.

High temperature chemical vapor deposition chamber

A one-piece gas distribution faceplate for a showerhead. The one-piece gas distribution faceplate includes a first surface, a second surface, and a third surface. The one-piece gas distribution faceplate comprises a plurality of first gas holes extending through the one-piece gas distribution faceplate between the first surface and the second surface. The one-piece gas distribution faceplate has an internal gas distribution cavity defined by a plurality of interconnecting channels. A plurality of second gas holes extend through the one-piece gas distribution faceplate between the first surface into a plurality of the interconnecting channels. The interconnecting channels are fluidly coupled to a plenum that is in turn connected to at least one gas conduit. The gas conduit extends to the third surface.

One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system

A faceplate for a showerhead of a semiconductor wafer processing system having a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the process region within a reaction chamber. The showerhead contains faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region and a plurality of channels that couple a plurality of second gas holes to a plenum that is fed the second gas from the manifold assembly.

Growing community of inventors

San Jose, CA, United States of America

Steve H Chiao