Micron Technology Incorporated

Micron Semiconductor, Inc.

Steve G Renfro

Gary R Gilliam

Roland Ochoa

Craig E Schneider

Kacey Cutler

A circuit for a sense amplifier (,) for use with a memory device (,). The circuit includes two devices (,and,) that are controlled by a selector (,). The first device (,) drives the sense amplifier (,) with a first current level. The second device (,) drives the sense amplifier (,) with a second current level, different from the first current level. The selector (,) is coupled to the first and second devices (,and,) so as to selectively couple one of the first and second devices (,and,) to the sense amplifier (,) based on a power supply voltage of the memory device (,).

Memory device with a sense amplifier

A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

A circuit for a sense amplifier (14) for use with a memory device (10). The circuts includes two devices(40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier(14) with a second current level, different from the first current level. The selector (14) is couple to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices(40and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

Variable load device responsive to a circuit parameter

This invention is a low-power circuit for detecting and latching the state of a fusible link. During a power-up sequence, the circuit makes a one time determination regarding the blown or unblown status of a fuse element. In one embodiment of the invention, the circuit comprises a fuse detect node which is coupled to power supply voltage (V.sub.cc) through a first IGFET and to ground through a second IGFET (which, in this embodiment, has more drive than the first) and the fuse element, respectively, when the fuse element is not severed. In another embodiment of the invention, the fuse detect node is coupled to ground through the second IGFET, and to power supply voltage (V.sub.cc) through the first IGFET (which, in this embodiment, has more drive than the second) and the fuse element, respectively, when the fuse element is not severed. During a first portion of the power-up sequence, both first and second IGFETs are rendered conductive, thus allowing the fuse detect node to reach equilibrium with respect to charge. The equilibrium charge state will depend on whether or not the fuse is severed or intact, and this charge state is reflected in a latched output. Once the output has been latched, whether in a low or high state, the first and second MOSFETs are rendered nonconductive during a second portion of the power-up sequence, thus isolating the fuse detect node from V.sub.cc and ground. The output is used to select or deselect a feature option or redundant circuit element.

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Boise, ID, United States of America

Steve G Renfro