Qualcomm Incorporated

USA as Represented by Secretary of the Navy

Steve Fanelli

Shiqun Gu

Sinan Goktepeli

Chengjie Zuo

Michael Andrew Stuber

Richard Hammond

Plamen Vassilev Kolev

Young Kyu Song

Richard Lee Waters

Husnu Ahmet Masaracioglu

Thomas Gee

A package includes a redistribution portion, a first portion, and a second portion. The first portion is coupled to the redistribution portion. The first portion includes a first switch comprising a plurality of switch interconnects, and a first encapsulation layer that at least partially encapsulates the first switch. The second portion is coupled to the first portion. The second portion includes a first plurality of filters. Each filter includes a plurality of filter interconnects. The second portion also includes a second encapsulation layer that at least partially encapsulates the first plurality of filters. The first portion includes a second switch positioned next to the first switch, where the first encapsulation layer at least partially encapsulates the second switch. The second portion includes a second plurality of filters positioned next to the first plurality of filters, where the secod encapsulation layer at least partially encapsulates the second plurality of filters.

Package comprising switches and filters

An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.

Utilization of backside silicidation to form dual side contacted capacitor

An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.

Monolithic integration of antenna switch and diplexer

An integrated circuit may include a gate, having gate fingers. The integrated circuit may also include a body, having semiconductor pillars interlocking with the gate fingers of the gate. The integrated circuit may also include a backside contact(s) coupled to the body. The integrated circuit may further include a backside metallization. The backside metallization may be coupled to the body through the backside contact(s).

Deep trench active device with backside body contact

A method is provided to create a proof mass supported by a dual-suspension system for Micro-Electro-Mechanical Systems (MEMS) using crystalline silicon. The pre-fabricated cavity method decreases the subsequent processing required to create the final mechanical structure including the proof mass and dual-suspension system. During processing, the proof mass may be connected to a support structure via tethered regions, which are removed subsequent to proof mass formation.

Growing community of inventors

San Diego, CA, United States of America

Steve Fanelli