International Business Machines Corporation

Other

Elpis Technologies Inc.

Steve Donald Holmes

Qinghuang Lin

Nathan P Marchack

Devendra K Sadana

Bruce Bennett Doris

Stephen W Bedell

Hariklia Deligianni

Anthony J Annunziata

Eric Andrew Joseph

Gen Pei Lauer

Sebastian Ulrich Engelmann

Jia Chen

Armand A Galan

Guy M Cohen

Jyotica V Patel

Eugene John O'Sullivan

Hyun K Lee

A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

Device with integration of light-emitting diode, light sensor, and bio-electrode sensors on a substrate

Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, the device includes a light-emitting diode (LED) structure communicatively coupled to the first contact layer and a biosensor element communicatively coupled to the second contact layer. The first contact layer is configured to operate as a bottom contact that provides electrical contact to the LED structure. The first contact layer is further configured to be substantially lattice matched with the substrate layer and a bottom layer of the LED structure.

Integrated optogenetic device with light-emitting diodes and glass-like carbon electrodes

Embodiments of the present invention are directed to a method for fabricating a magnetoresistive random access memory (MRAM) device. A non-limiting example of the method includes depositing a dielectric layer on a contact arranged on a substrate including a magnetic tunnel junction (MTJ) pillar. The method includes reducing a width of the MTJ pillar. The method further includes depositing an encapsulation layer on the dielectric layer and the MTJ pillar.

Self-aligned ion beam etch sputter mask for magnetoresistive random access memory

Lift-off methods for fabricating metal line patterns on a substrate are provided. For example, a method to fabricate a device includes forming a sacrificial layer on a substrate and forming a photoresist mask over the sacrificial layer, isotropically etching a portion of the sacrificial layer exposed through an opening of the photoresist mask to form an undercut region in the sacrificial layer below the photoresist mask, wherein the undercut region defines an overhang structure, and anisotropically etching a portion of the sacrificial layer exposed through the opening of the photoresist mask to form an opening through the sacrificial layer down to the substrate. Metallic material is deposited to cover the photoresist mask and to at least partially fill the opening formed in the sacrificial layer without coating the overhang structure with metallic material. The sacrificial layer is dissolved to lift-off the metallic material covering the photoresist mask.

Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch

A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

Spin torque MRAM fabrication using negative tone lithography and ion beam etching

A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.

A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

In one aspect, a method for forming a contact to a device is provided which includes the steps of: forming a conformal etch stop layer surrounding the device; forming a dielectric layer over and covering the device; forming a contact trench in the dielectric layer, wherein the contact trench is present over the device and extends down to, or beyond, the etch stop layer; exposing a contact region of the device within the contact trench by selectively removing a portion of the etch stop layer covering a top portion of the device; and filling the contact trench with a conductive material to form the contact to the device. Other methods for forming a contact to a device and also to BEOL wiring are provided as are device contact structures.

Techniques for forming contacts for active BEOL

A system for plant illumination that may be installed in or made as part of a planting pot. The system employs a string of illuminable fixtures each having an illumination source. The fixtures may be operated on low voltage that steps down through a transformer and may employ an ambient light sensor. The system may incorporate light globes that protect the illumination sources and may incorporate a transparent color to provide colored light. Light shields may be employed to direct the light from each illumination source. A splashguard may be employed and placed between the illumination source and its respective socket to prevent water from entering the socket. The container may be formed with two walls to protect the wiring being disposed there between.

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Memphis, TN, United States of America

Steve Donald Holmes