Micron Technology Incorporated

Steve Cummings

Gurtej S Sandhu

Howard E Rhodes

Sanh D Tang

Cem Basceri

Gordon A Haller

Mark R Visokay

Dan Gealy

Tom Graettinger

A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

Methods of fabricating a memory device

Semiconductor memory device

A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuO) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

Integrated capacitors fabricated with conductive metal oxides

A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuO ) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

Growing community of inventors

Boise, ID, United States of America

Steve Cummings