Advanced Technology Materials, Inc.

Stephen T Johnston

Peter C Van Buskirk

Steven M Bilodeau

Michael W Russell

Daniel J Vestyck

Thomas H Baum

Jeffrey F Roeder

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &#x3bc;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10to about 10&#x3bc;m. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

A method of preventing oxygen deficiency in a ferroelectric or high &#x3b5; film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high &#x3b5; film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high &#x3b5; film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high &#x3b5; film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO.

Oxidative top electrode deposition process, and microelectronic device structure

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10,to about 10,&mgr;m,. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

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Bethel, CT, United States of America

Stephen T Johnston