Emcore Corporation

Douglas Electrical Components, Inc.

Stephen Schwed

Edward W Douglas

LinLin Liu

Xiang Gao

Alex D Ceruzzi

Christopher Rempel

Edward William Douglas

Stephen Diego Pellegrino

Christopher Palmer

Ivan Eliashevich

Bryan S Shelton

Mark Gottfried

Michael G Brown

Louis A Koszi

Various configurations of electrically conductive, gas-sealed connections between two pieces of aluminum are described along with methods of making an electrically conductive, gas-sealed connection between two pieces of aluminum.

Electrically conductive, gas-sealed, aluminum-to-aluminum connection and methods of making same

Various configurations of muon drift tubes for use in muon tomography are described and involve aluminum end caps coupled to an aluminum tube, an electrode in each of the end caps, and an anode wire extending between the electrodes. A two-part electrically conductive, gas-sealed, connection is located between an aluminum end cap and the aluminum tube. Methods of making those configurations of muon drift tubes are also described.

Muon drift tube and method of making same

A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer is disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.

PIN diode structure with zinc diffusion region

A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.

A method of protecting and cleaning a semiconductor wafer using laser ablation includes the following steps: applies a protective coating on the side to be cut of a wafer with sapphire substrate, mounts the other side of the sapphire wafer on an adhesive tape, mounts the sapphire wafer on a cutting table, cuts the sapphire wafer with a laser, breaks the sapphire wafer into die, and cleans the sapphire wafer with a cleaning solution that removes slag resulting from the cutting, debris resulting from the breaking, and the protective coating, but the adhesive tape, the cleaning solution, and the protective coating are selected such that the cleaning solution does not damage the adhesive tape.

Semiconductor wafer protection and cleaning for device separation using laser ablation

A method of manufacturing a monolithic compound semiconductor sensing device includes epitaxially depositing a signal conditioning epitaxy on a substrate surface, providing a well in the signal conditioning circuit and exposing the substrate surface, and epitaxially depositing a sensor within the well.

Monolithically integrated sensing device and method of manufacture

A monolithically integrated, compound semiconductor sensing device and a method of making the device is provided. The device includes an signal conditioning circuit formed on a substrate surface. A sensor including one or more compound semiconductors is deposited on a second portion of the substrate surface. The signal conditioning circuit has a well formed therein for exposing the substrate surface and the sensor is deposited within the well.

A method of forming a self-aligned contact on a semiconductor includes forming a layer of a dielectric material over a semiconductor, providing a photoresist layer over the dielectric layer and then exposing the photoresist layer with a desired pattern and developing an opening in the photoresist layer. The dielectric material exposed through the photoresist layer opening is then removed to form a contact opening extending through the dielectric material to the semiconductor. The photoresist layer is then eroded so as to enlarge the size of the opening in the photoresist layer, whereby the dielectric material adjacent the contact opening is exposed through the enlarged opening of the photoresist layer. A barrier metal is then deposited in the enlarged opening of the photoresist layer and in the contact opening of the dielectric material, whereby the barrier metal overlies the exposed portion of the dielectric material. A conductive metal is then deposited atop the barrier metal. The barrier metal isolates the contact metal from the semiconductor, thereby preventing interaction or intermixing of the contact metal and the semiconductor.

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Bridgewater, NJ, United States of America

Stephen Schwed