Texas Instruments Corporation

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Avago Technologies International Sales Pte. Limited

Avago Technologies General IP (singapore) Pte. Ltd.

Agilent Technologies, Inc.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Agilent Technologies Texas Instruments Incorporated

Stephen Roy Gilbert

Scott Robert Summerfelt

Richard C Ruby

Luigi Colombo

Theodore Sidney Moise

Guoqiang Xing

Sanjeev Aggarwal

Mark R Visokay

Francis Gabriel Celii

Justin F Gaynor

John Dwight Larson, Iii

Shawming Ma

Suresh Sridaran

Laura Wills Mirkarimi

Dariusz Burak

Tomoyuki Sakoda

Ken A Nishimura

Martin Franosch

Michael Louis Frank

Kaushal Kishore Singh

Jun Amano

Mark A Unkrich

Ted S Moise

Trace Quentin Hurd

Andrew Thomas Barfknecht

Mark A Kressley

Charles D E Lakeman

Stacey A Yamanaka

David Archbold

Rahim Kavari

Robin Black

Donald Chow

Gordon Armstrong

Stevan Hunter

Alvin L S Loke

Laura Wills-Mirkarimi

Seungku Lee

Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.

Acoustic wave resonator

An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

Polymer lid wafer-level package with an electrically and thermally conductive pillar

A surface acoustic wave (SAW) resonator device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate comprises a bulk region, and a surface region. The surface region has a high trap density, and a reduced carrier mobility, compared to the bulk region. A piezoelectric layer, having a first surface and a second surface, is disposed over the semiconductor substrate. A plurality of electrodes are disposed over the first surface of the piezoelectric layer, and the plurality of electrodes are configured to generate surface acoustic waves in the piezoelectric layer. The SAW resonator device also comprises a layer disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.

Surface acoustic wave (SAW) resonator having trap-rich region

A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses

A surface acoustic wave (SAW) resonator device is disclosed. The SAW resonator has a piezoelectric layer disposed over a semiconductor substrate. The piezoelectric layer has a first surface and a second surface. The polarization axis (C-axis) of the piezoelectric layer is oriented at an angle relative to the second surface of the piezoelectric layer in a range of approximately 0&#xb0; to approximately 45&#xb0;. A layer is disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.

Surface acoustic wave (SAW) resonator

A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the substrate. A plurality of features provided on a surface of the piezoelectric layer reflects acoustic waves and reduces the incidence of spurious modes in the piezoelectric layer.

A multiplexer device includes a single die, at least three acoustic filters and at least one antenna port arranged on the single die, and a shunt inductance connected between each of the at least one antenna port and ground. Each acoustic filter includes one of a transmit or receive filter corresponding to a predetermined radio frequency band. The at least one antenna port is connected to at least one antenna, respectively, where each of the at least one antenna port is further connected to at least one acoustic filter arranged on the single die, and is configured to pass RF signals corresponding to the predetermined RF band of the connected at least one acoustic filter. The shunt inductance provides impedance matching between each of the at least one antenna port and each of the at least one acoustic filter connect to the at least one antenna port.

Acoustic filters integrated into single die

A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 &#x3a9;-cm, and less than approximately 15000 &#x3a9;-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 &#x3bc;m to approximately 30.0 &#x3bc;m, and is substantially without iron (Fe).

A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A silicon layer disposed between a first surface of the layer and a second surface of the piezoelectric layer. A first surface of the silicon layer has a smoothness sufficient to foster atomic bonding between the first surface of the silicon layer and the second surface of the piezoelectric layer.

An acoustic power transformer includes: an input port adapted to receive an input signal; a transmitting acoustic transducer coupled to the input port and adapted to transmit an acoustic wave in response to the input signal received at the input port; a receiving acoustic transducer adapted to receive the acoustic wave and in response thereto to produce an output signal; an output port adapted to output the output signal; and an acoustic medium disposed in an acoustic wave propagation path between the transmitting acoustic transducer and the receiving acoustic transducer. In one case, at least one of the transmitting acoustic transducer and receiving acoustic transducer includes a Fresnel lens. In another case, the transformer includes an acoustic lens disposed in the acoustic wave propagation path between the transmitting acoustic transducer and the receiving acoustic transducer.

Acoustic power transformer including lens

In one aspect, a data communication system includes a modulator, an integrated acoustic data coupler, and a demodulator. The modulator modulates a carrier signal having a frequency in an operating frequency range in response to an input data signal and provides the modulated carrier signal at a modulator output. The integrated acoustic data coupler includes an acoustically resonant structure that has one or more acoustic resonant frequencies in the operating frequency range. The acoustically resonant structure includes a first thin film electro-acoustic transducer electrically coupled to the modulator output, a second thin film electro-acoustic transducer, and a substrate. The substrate supports, acoustically couples, and provides an electrical isolation barrier between the first and second thin film electro-acoustic transducers. The demodulator has a demodulator input coupled to the second thin film electro-acoustic transducer and is operable to generate an output data signal from an input signal received at the demodulator input.

Acoustically communicating data signals across an electrical isolation barrier

A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.

Integrated circuit and method

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San Francisco, CA, United States of America

Stephen Roy Gilbert