Spts Technologies Limited

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Aviza Technology Limited

Trikon Holdings Limited

Ge Oil & Gas UK Limited

Trikon Technologies Limited

Aviza Europe Limited

Magnex Scientific Limited

Stephen Robert Burgess

Rhonda Hyndman

Anthony Paul Wilby

Paul Rich

Andrew Price

Kathrine Crook

Amit Rastogi

Scott Haymore

Clive Luca Widdicks

Mark Ian Carruthers

Daniel T Archard

Ian Moncrieff

Keith Edward Buchanan

Nicholas Rimmer

Katherine Crook

William Royle

Euan Alasdair Morrison

Daniel Cook

Eduardo Paulo Lima

John Macneil

Andrew Peter Roberts

Suranjith Warnakulasuriya

Tony Wilby

Adrian Thomas

Alex Theodosiou

Andrew John Varney

Paul Snowdon

Daniel Archard

Kyle Hutchings

Yun Zhou

Hilke Donohue

James Francis O'Sullivan

Carsten Goergens

Darren Houlden

Paul Densley

Constanine Fragos

Philip Stephenson

Chris Kendal

P Densley

Keith Buchanan

A Physical Vapour Deposition (PVD) apparatus having a PVD chamber, a target, a substrate support in the PVD chamber comprising an upper rotatable portion having an upper surface on which a substrate can be supported and a lower stationary portion, an RF source configured to supply an RF signal having an RF power to the lower stationary portion, and an arrangement for rotating the upper rotatable portion during a PVD process performed in the PVD chamber. The upper rotatable portion and the lower stationary portion are spaced apart so that the RF power supplied to the lower stationary portion is capacitively coupled to the upper rotatable portion.

PVD apparatus and method

A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

PE-CVD apparatus and method

A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Method and apparatus for depositing a material

A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.

Plasma etching apparatus

An elongate tape element (), a flexible pipe body and method of producing a flexible pipe body are disclosed. The tape element has a cross-sectional profile comprising a body portion () for being positioned between collapse resistant tape windings such that each body portion lies at least partially in a gap () between adjacent collapse resistant tape windings (); and at least one wing portion () extending from an end region of the body portion (), the at least one wing portion () configured to span the gap () and respectively abut with a radially inner surface of an adjacent collapse resistant tape winding ().

Elongate tape element and method

A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.

A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.

Method of deposition

An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of Oor with Ointroduced into the process at a flow rate of 250 sccm or less.

Method of improving adhesion

According to the invention there is a method of depositing SiOonto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.

Deposition of silicon dioxide

A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.

Method of degassing

Methods and related apparatus support a work piece during a physical vapor deposition. An aluminium support having a support surface coated with a heat absorbent coating is provided. The support is cooled to around 100&#xb0; C. and a PVD process is performed such that, with cooling, the work piece temperature is between 350&#xb0; C. and 450&#xb0; C. The coating is inert and/or ultra-high voltage compatible.

Method of supporting a workpiece during physical vapour deposition

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Gwent, United Kingdom

Stephen Robert Burgess