Other

International Business Machines Corporation

Infineon Technologies North America Corp.

Stephen Rahn

Helmut Horst Tews

Stephan Kudelka

Irene Lennox McStay

Jack Allan Mandelman

Rajarao Jammy

Uwe Paul Schroeder

Michael Lester Wise

Andreas Knorr

Uwe Schroeder

The invention is for a solid body type guitar having a pickup selector switch located closely adjacent to the volume controls. The invention is a specially developed pickup selector switch tip knob having an extension arm which is contoured to conveniently fit the human finger for easy manipulation of the pickup selector switch. The contoured extension arm can have one or both sides contoured to accommodate easy pickup selection from either direction with the guitar player's hand. The invention can be mounted on the pickup selector switch post such that the extension arm is facing either toward the guitar strings or away from the guitar strings.

Contoured guitar pickup selector switch knob

A method for increasing the surface area of an original surface in a semiconductor device is disclosed. In an exemplary embodiment of the invention, the method includes forming a layered mask upon the original surface, the layered mask including a masking layer thereatop having a varying thickness. An isotropic etch is then applied to the layered mask, which isotropic etch further removes exposed portions of the original surface as the layered mask is removed. Thereby, the isotropic etch enhances the non-uniformity of the masking layer and creates a non-uniformity in planarity of the original surface.

Method for surface roughness enhancement in semiconductor capacitor manufacturing

Rough oxide hard mask for DT surface area enhancement for DT DRAM

A trench capacitor structure for improved charge retention and method of manufacturing thereof are provided. A trench is formed in a p-type conductivity semiconductor substrate. An isolation collar is located in an upper portion of the trench. The substrate adjacent the upper portion of the trench contains a first n&plus; type conductivity region and a second n&plus; type conductivity region. These regions each abut a wall of the trench and are separated vertically by a portion of the p-type conductivity semiconductor substrate. A void which encircles the perimeter of the trench is formed into the wall of the trench and is located in the substrate between the first and second n&plus; type conductivity regions.

Structure and method for improved isolation in trench storage cells

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Fishkill, NY, United States of America

Stephen Rahn