Sandia Corporation

Stephen R Lee

Andrew A Allerman

Mary H Crawford

Jung Han

Daniel D Koleske

Karen Waldrip

A denticulated Group III nitride structure that is useful for growing AlGaN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films

Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films

A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al Ga N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

Distributed bragg reflector using AIGaN/GaN

Growing community of inventors

Albuquerque, NM, United States of America

Stephen R Lee