Leland Stanford Junior University

Samsung Electronics Co., Ltd.

Honda Motor Co., Ltd.

Stephen P Walch

Friedrich B Prinz

Ki-Hyun Kim

Peter Schindler

Yongmin Kim

Timothy P Holme

Andrei Teodor Iancu

Neil Dasgupta

Jinsung Kang

Takane Usui

James F Mack

Michael C Langston

John Provine

Wonyoung Lee

Youngdong Lee

Hyo Jin Kim

Sam Hyung Sam Kim

A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.

Semiconductor devices including electrically isolated patterns and method of fabricating the same

Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.

Method of forming thin film of semiconductor device

Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.

Field-aided preferential deposition of precursors

Growing community of inventors

Stanford, CA, United States of America

Stephen P Walch