Nikon Corporation

Nikon Precision Incorporated

Stephen P Renwick

Michael B Binnard

Daniel Gene Smith

Steven Douglas Slonaker

Donis George Flagello

David Michael Williamson

Paul Derek Coon

Jonathan Kyle Wells

Johnathan Marquez

Matthew D Rosa

Brett William Herr

Koichi Fujii

Collection reflectors with multiple reflector elements defined on a curved surface are used to collect EUV optical radiation from an EUV emitting area. Each of the reflector elements can image the emitting area at or near a corresponding reflective element of a second multi-element reflector that overlaps radiation from each of the multiple reflector element of the collection reflector to illuminate a grating reticle. Systems with such a collection reflector can use fewer optical elements. In addition, grating reticles are defined on a curve substrate an include a plurality of grating phase steps so that the grating reticle provides phase curvature along two axes but with physical curvature along a single axis. Methods of producing varying duty cycle 1D patterns are also disclosed.

Curved reticle by mechanical and phase bending along orthogonal axes

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N&#x3e;1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Euv lithography system for dense line patterning

A position encoder for monitoring position of an object includes a target pattern, an illumination system, an image sensor, and a control system. The illumination system generates (i) a first illumination beam that is directed toward and impinges on the target pattern, the first illumination beam having a first beam characteristic; and (ii) a second illumination beam that is directed toward and impinges on the target pattern, the second illumination beam having a second beam characteristic that is different than the first beam characteristic. The image sensor is coupled to the object and is spaced apart from the target pattern. The image sensor senses a first set of information from the first illumination beam impinging on the target pattern and senses a second set of information from the second illumination beam impinging on the target pattern. The control system analyzes the first set of information and the second set of information to monitor the position of the object.

High-resolution position encoder with image sensor and encoded target pattern

EUV lithography system for dense line patterning

Alignment patterns that are selected based on device pattern spatial frequencies are defined on a reticle. The alignment patterns can include periodic arrays of lines, spaces, dots, of other pattern elements. Such patterns can be defined as sets associated with a common spatial frequency or frequency range, or some or all sets can include alignment marks having mark elements associated with different spatial frequencies.

Spatial-frequency matched wafer alignment marks, wafer alignment and overlay measurement and processing using multiple different mark designs on a single layer

A system and methods are provide for modeling the behavior of a lithographic scanner and, more particularly, a system and methods are provide using thresholds of an image profile to characterize through-pitch printing behavior of a lithographic scanner. The method includes running a lithographic model for a target tool and running a lithographic model on the matching tool for a plurality of different settings using lens numerical aperture, numerical aperture of the illuminator and annular ratio of a pattern which is produced by an illuminator. The method then selects the setting that most closely matches the output of the target tool.

Systems and methods for adjusting a lithographic scanner

A method for matching a first OPE curve () for a first exposure apparatus (A) used to transfer an image to a wafer () to a second OPE curve () of a second exposure apparatus (B). The method can include the step of adjusting a tilt of a wafer stage () that retains the wafer to adjust the first OPE curve. As provided herein, the first exposure apparatus (A) has the first OPE curve () because of the design of the components used in the first exposure apparatus (A), and the second exposure apparatus (B) has a second OPE curve () because of the design of the components used in the second exposure apparatus (B). Further, the tilt of the wafer stage () can be selectively adjusted until the first OPE curve () approximately matches the second OPE curve (). With this design, the two exposure apparatuses (A) (B) can be used for the same lithographic process. Stated in another fashion, exposure apparatuses (A) (B) from different manufacturers, when using the same reticle (), will transfer similar images to the wafer ().

System and method for an adjusting optical proximity effect for an exposure apparatus

A method for diagnosing a lithographic tool. The method includes developing digitalized images of at least one wafer pattern with different exposure doses and assembling the digitized images into a pupilgram. The at least one function is of a known illuminator behavior of the lithographic tool is modeled. The pupilgram is fitted to the modeled function to determine whether a behavior associated with the pupilgram is within predetermined limits of illuminator behavior to diagnosis imperfections in the illuminator behavior. One technique applied to the illuminator analysis consists of evaluating the dose transmitted (by direct calculation) by the lens for a given input pupilgram (or set of pupilgram basis functions), a given pattern size and pitch, and a defined lens NA, is described. This transmitted dose is calculated and displayed as a function of position within the illumination distribution (pupilgram), and is valuable for the highlighting of those parts of the illumination distribution that contribute the largest amount of relative dose to the imaging process, and to compare the dose transmitted by different orientations of the same pattern.

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Moss Beach, CA, United States of America

Stephen P Renwick