Marshall Electric Corp.

Delco Electronics Corporation

Other

Delphi Technologies, Inc.

Stephen P Barlow

Thomas C Marrs

John R Fruth

Mark Ford Henderson

Donald Ray Disney

Jerral A Long

Pankaj Mithal

Michael Joseph Huemmer

Patrick A Davis

Paul C Staab

Donald D Spencer

An ignition system for an internal combustion engine has a power source, a transformer having a first primary winding and a second primary winding and a secondary winding, a connector extending from the secondary winding so as to connect with a terminal of a spark plug, and a multi-strike circuit cooperative with the electronic spark timing circuit so as to fire the transformer with multiple strikes between the falling edge and the rising edge. A booster circuit is cooperative at the electronic spark timing circuit so as to collect and store energy from the power source while the electronic spark timing circuit fires the transformer. A delay circuit fires the transformer at a time subsequent to the falling edge and before the rising edge.

Multi-strike ignition system for an internal combustion engine

A method for producing a solid state device, including forming a first dielectric layer over an epitaxial layer at least partially covering the a silicon substrate and depositing a photoresist material there-over, removing a predetermined portion first dielectric layer to define an exposed portion, implanting dopants into the exposed portion to define a doped portion, preferentially removing silicon from the exposed portion to generate trenches having V-shaped cross-sections and having first and second angled sidewalls defining the V-shaped cross-section, wherein each angled sidewall defining the V-shaped cross-section is a silicon face having a 111 orientation, and forming a 2DEG on at least one sidewall.

Method for producing trench high electron mobility devices

A method of firing a spark plug of an internal combustion engine includes supplying AC power to the spark plug in which the AC power has a waveform with a rising edge and a falling edge, activating the spark plug during the rising edge of the waveform, and deactivating the spark plug during the falling edge of the waveform. This method further includes connecting an engine control module to an ignition coil and connecting the engine coil to the spark plug. The firing of the ignition coil mirrors the square waveform of AC power from the engine control module. A battery is connected to the engine control module.

Electronic spark timing control system for an AC ignition system

A method of firing at least one spark plug of an internal combustion engine include supplying AC power to the spark plug in which the AC power has a waveform with a rising edge and a falling edge, activating the spark plug during the rising edge of the waveform, and deactivating the spark plug during the falling edge of the waveform. This method further includes connecting an engine control module and a vehicle power supply to at least one AC ignition coil and connecting the AC ignition coil to the spark plug or spark plugs. The firing duration of the AC ignition coil or transformer mirrors a digital square waveform duration from the engine control module.

An ignition system for an internal combustion engine has a power source, a transformer having first and second primary windings and a secondary winding, a connector extending from the secondary winding and adapted so as to connect with a terminal of the spark plug of the internal combustion engine, and electronic spark timing circuit cooperative with the transformer so as to activate and deactivate voltage to the first and second primary windings. The first and second primary windings are connected to the power source such that the transformer produces an alternating voltage output from the secondary winding of between 1 kHz and 100 kHz and a voltage of at least 20 kV. A forced push-pull inverter is cooperative with the electronic spark timing circuit so as to fix a frequency of voltage to the first and second primary windings.

Forced frequency ignition system for an internal combustion engine

A method for producing a solid state device, including forming a first dielectric layer over an epitaxial layer at least partially covering the a Silicon substrate and depositing a photoresist material thereover, removing a predetermined portion first dielectric layer to define an exposed portion, implanting dopants into the exposed portion to define a doped portion, preferentially removing Silicon from the exposed portion to generate trenches having V-shaped cross-sections and having first and second angled sidewalls defining the V-shaped cross-section, wherein each angled sidewall defining the V-shaped cross-section is a Silicon face having a 111 orientation, and forming a 2DEG on at least one sidewall.

Trench high electron mobility transistor device

An IC power package particularly suitable for use as a rectifier for an automotive ac generator, as well as an IC packaging method. The power package comprises an electrically-conductive base, a MOSFET die mounted to the base so that the drain region of the MOSFET is electrically connected to the base, an electrically-conductive pin mounted to the die and electrically connected to the source region of the MOSFET, and an electrically-conductive member electrically connected to the gate region of the MOSFET. The conductive member can take several forms, including a second pin or a leadframe mounted to the die, or an annular-shaped member mounted to the base by an electrically-insulative member. In the latter embodiment, the annular-shaped member may be electrically connected to the gate region with a bond wire. The die is preferably encapsulated on the base, so that the base, pin and conductive member provide three connections for a rugged IC package.

Press-fit IC power package and method therefor

A semiconductor power device (100) that includes active cells in an interior region of an epitaxial layer (16) on a semiconductor substrate (12), and an edge termination structure that surrounds the cells and separates the cells from the die edge (48). A polysilicon layer (26) overlies and is electrically insulated from the epitaxial layer (16), a gate metal field plate (36) contacts the polysilicon layer (26), and a portion of the polysilicon layer (26) forms a gate for each cell. Each of the active cells also has a collector/anode terminal formed by the substrate (12), an emitter/cathode terminal formed by a well (18), emitter diffusion (20) and emitter metal (22), and a base formed by the epitaxial layer (16). The edge termination structure includes a first well (34) of a first conductivity type underlying the polysilicon layer (26) and completely surrounding the active cells, a second well (30) of an opposite conductivity completely surrounding the first well (34), and metallization (42) contacting the second well (30). The first well (34) is part of a low-voltage ring (28) while the second well (30) is part of a high-voltage ring. The wells (30, 34) are preferably spaced relative to each other and to the device edge (48) to provide ballast resistance through the epitaxial layer (16), such that a breakdown will not be able to generate enough localized current to damage or destroy the device (100) when a reverse power pulse is experienced.

IGBT power device with improved resistance to reverse power pulses

A semiconductor power device (100) that includes a number of bipolar or FET power devices (116), an over-voltage clamp (118), and an edge termination structure (110) that separates the power devices (116) and the over-voltage clamp (118). The power devices (116) are formed in an interior region (100a) of a semiconductor substrate (128), while the over-voltage clamp (118) is formed in a peripheral region (100b) of the substrate. The over-voltage clamp (118) and the gate/base terminals of the power devices (116) are formed in a polysilicon layer (126) overlying the substrate (128), such that the over-voltage clamp (118) is connected between the anode and gate/base terminals of each power device (116) to provide over-voltage protection. The edge termination structure (110) is formed in the substrate (128) so as to completely surround the interior region (100a) of the substrate (128), and therefore surrounds the power devices (116) to form a continuous barrier structure between the power devices (116) and the over-voltage clamp (118). The edge termination structure (110) includes a main junction (112) and at least one field-limiting ring (114), each of which is formed by a continuous well of the same electrical conductivity type. The edge termination structure (110) also includes a pair of field plates, a first (142) of which contacts the field-limiting ring (114) and a second (138) contacts the polysilicon layer (126) so as to make electrical contact with a gate terminal of the main junction (112).

Edge termination for zener-clamped power device

A supra-passivant grid is disclosed which is capable of conducting residual charge from the surface of an integrated circuit and eliminating generic leakage effects on sensitive circuitry below.

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Noblesville, IN, United States of America

Stephen P Barlow