Sdl Inc.

Spectra Diode Laboratories, Inc.

Stephen O'Brien

David F Welch

Donald R Scifres

Robert G Waarts

David G Mehuys

Amos A Hardy

Robert J Lang

Jo S Major

Ross A Parke

Kenneth M Dzurko

Alexander Schoenfelder

Amos Hardy

Hanmin Zhao

Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device.

Optical semiconductor device with diffraction grating structure

An optical gain medium comprising, for example, an optical semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The gain medium may have a linear stripe region or a diverging stripe region that allows the light propagating therein to diverge along at least part of its length, such as a flared or tapered amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels employing differential pumping. Differential pumping may be both longitudinal and lateral within the amplifier and may be patterned to reduce the peak modal gain observed longitudinally along and/or laterally across the pumped stripe region of the gain medium so that he experienced modal gain of the propagating light is more balanced along the length of the stripe region, i.e., rendered significantly more uniform in distribution, providing for higher diffraction limited performance without optical filamentation formation.

Differentially patterned pumped optical semiconductor gain media

A coherent light source, such as a laser oscillator and a monolithic MOPA device, and a broad area light amplifying device, all characterized by having a leaky waveguide beam expander coupled thereto for expanding a single mode beam into a wide light beam in a coherent manner. The beam expander comprises an elongated antiguide core of a first refractive index and a radiated-wave receiving region of a higher refractive index to receive lightwaves laterally radiated from the antiguide core. This beam expander can be located at an output end of a single mode laser oscillator to receive and expand the beam, at an input end of a broad area optical power amplifier to allow the amplifier to accept a narrow input beam, or between the laser oscillator and power amplifier in a MOPA device. The beam expander elements can also be located partially or entirely within the resonant optical cavity of a laser oscillator.

Broad-area MOPA device with leaky waveguide beam expander

An optical crossbar switch matrix for use in switching optical signals from a first set of optical fibers to a second set of optical fibers, in any order, which is characterized by having a matrix of rows and columns of diffraction gratings formed in a semiconductor heterostructure. Each grating is independently biased with either a forward or reverse bias voltage to switch the grating between a reflective state and a transmissive state. The gratings are oriented at an angle relative to the rows and columns so that when the Bragg condition for the light received from an optical film is met, a portion of the light is diffracted from the row in which it is propagating into a column toward another optical fiber. The heterostructure may include optical amplifiers to restore the optical signal to its original power level. Beam expanding, collimating and focussing optics may also be integrated into the heterostructure.

NxN Optical crossbar switch matrix

A semiconductor laser that includes at least one grating reflector with a grating period selected to diffract at a nonperpendicular angle within the plane of the laser waveguide. This allows dispersal of laser light, eliminating filamentary multimode operation of broad area lasers. In one embodiment, the grating reflector couples light between a single transverse mode waveguide portion of the optical cavity and a second, broad area, portion that is not collinear with the single mode waveguide. In another embodiment, the cavity favors a ring mode of oscillation. One or more grating reflectors form part of the feedback mechanism which forms a resonant optical cavity with noncollinear portions. Other reflectors in the feedback mechanism include facet reflectors which can be cleaved or ion milled, or semiconductor material refractive index boundaries. Laser embodiments with two or more grating reflectors can be independently tuned to provide a high rate of amplitude modulation. Spatial beam deflection and wavelength tuning are also achieved. A stable unidirectional ring laser is also described. Multiple ring laser cavities can also be coupled together by partially reflecting grating reflectors to form a laser array.

Semiconductor ring and folded cavity lasers

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Sunnyvale, CA, United States of America

Stephen O'Brien