Electro Scientific Industries, Inc.

Stephen Neal Swaringen

Kelly Bruland

Ho Wai Lo

Brian W Baird

Clint R Vandergiessen

Mark Alan Unrath

Keith Grant

Frank G Evans

Andrew B Wells

David Martin Hemenway

William J Jordens

Brady Nilsen

A method for detecting particulate contamination under a workpiece fixtured by a calibrated material handling system includes performing 3D measurements of a workpiece at multiple of positions to construct a 3D map of the workpiece, calibrating the 3D map by comparing a pre-computed calibration map to the 3D measurements, and detecting particulate contamination by processing the calibrated map.

Method for detecting particulate contamination under a workpiece

A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

On-the fly laser beam path dithering for enhancing throughput

Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.

Methods and systems for semiconductor structure processing using multiple laser beam spots

On-the-fly laser beam path error correction for specimen target location processing

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously

A method makes a discrete adjustment to static alignment of a laser beam in a machine for selectively irradiating conductive links on or within a semiconductor substrate using the laser beam. The laser beam propagates along a beam path having an axis extending from a laser to a laser beam spot at a location on or within the semiconductor substrate. The method generates, based on at least one measured characteristic of the laser beam, at least one signal to control an adjustable optical element of the machine effecting the laser beam path. The method also sends said at least one signal to the adjustable optical element. The method then adjusts the adjustable optical element in response to said at least one signal so as to improve static alignment of the laser beam path axis.

Systems and methods for alignment of laser beam(s) for semiconductor link processing

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Semiconductor structure processing using multiple laser beam spots

Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.

Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset

A method for calibrating a laser micro-machining system in three dimensions includes scanning a sample workpiece to determine the 3D surface, calculating the best fit surfaces to the scanned data in a series of steps, and storing the results so that subsequent workpieces can be calibrated to remove systematic errors introduced by variations in an associated material handling subsystem. The method optionally uses plate bending theory to model particulate contamination and splines to fit the 3D surface in a piecewise fashion to minimize the effect of local variations on the entire surface fit.

Method for correcting systematic errors in a laser processing system

Laser beam positioners ( ) employ a steering mirror ( ) that performs small-angle deflection of a laser beam ( ) to compensate for cross-axis ( ) settling errors of a positioner stage ( ). A two-axis mirror is preferred because either axis of the positioner stages may be used for performing work. In one embodiment, the steering mirror is used for error correction only without necessarily requiring coordination with the positioner stage position commands. A fast steering mirror employing a flexure mechanism and piezoelectric actuators to tip and tilt the mirror is preferred in semiconductor link processing (&ldquo;SLP&rdquo;) applications. This invention compensates for cross-axis settling time, resulting in increased SLP system throughput and accuracy while simplifying complexity of the positioner stages because the steering mirror corrections relax the positioner stage servo driving requirements.

On-the-fly beam path error correction for memory link processing

A Q-switched solid state laser system (,) operates in a pulse processing control system (,) that employs an autopulse mode and a pulse-on-position mode to stabilize the pulse-to-pulse laser energy delivered to a workpiece (,) that is moved by an X-Y positioner (,). In the autopulse mode, laser pulses are emitted at a near maximum PRF, but the pulses are blocked from reaching the workpiece by an external modulator (,), such as an acousto-optic modulator (&ldquo;AOM&rdquo;) or electro-optic modulator (also referred to as a Pockels cell). In the pulse-on-position mode, the laser emits a pulse in response to the positioner moving to a location on the workpiece that coincides with a commanded coordinate location. The processing control system delivers a stream of coordinate locations, some requiring processing, at a rate that moves the positioner and triggers the laser at about the near maximum PRF. The pulse processing control system sets the AOM to a transmissive state whenever a coordinate location requiring processing is commanded and otherwise sets the AOM to a blocking state. This pulse timing technique provides a nearly constant interpulse period for the laser, thereby improving its pulse-to-pulse energy stability at the near maximum PRF.

Growing community of inventors

Rockwall, TX, United States of America

Stephen Neal Swaringen