Nightingale-eos Ltd

Therma-wave, Inc.

Nightingale-eod Ltd.

Stephen Morris

A method for locating the center of a beam profile, comprises the steps of: providing a beam profile; selecting one or more strips through the beam profile; identifying distinct regions of intensity along the one or more strips and labelling them consistently; calculating a combined average intensity for each labelled region, using data from the one or more strips; plotting the average intensity against the labelled regions and comparing the results with a plot of the actual intensity obtained by taking a cross-section through the center of at least one of the one or more strips; and optimizing the location of the center of at least one of the one or more strips so as to obtain the best fit between the average intensity plot and the actual intensity plot to thereby identify the center of the beam profile.

Apparatus and method for locating the centre of a beam profile

A method of compensating for sample misalignment in an optical measurement apparatus (), comprises the steps of: determining an expected response from a detector () in said optical measurement apparatus given a particular set of parameters defining a path that light can take through the optical measurement apparatus from a source (), via a sample (), to the detector (); measuring a response from the detector for the sample under test; and refining the set of parameters until the expected response and the measured response converge so as to determine the set of parameters giving rise to the measured response.

Apparatus and method for compensating for sample misalignment

A method and means for determining the thickness, or curvature, of a thin film or stack of thin films disposed on the surface of a substrate having a curvature comprising generating a beam of radiation, focusing the beam through the one or more films onto a surface of the substrate, measuring the intensity across the reflected beam as a function of the angle of incidence of a plurality of rays derived from the focussed beam, determining the path of each of the plurality of rays and determining the thickness, or curvature of the film, or films, from the angular dependent intensity measurement.

Method for measuring the thickness or curvature of thin films

A stage for aligning a workpiece relative to analyzing apparatus. The stage has a platform and means for maintaining a workpiece on the platform. The platform is operable to tilt relative to the analyzing apparatus and thereby rotate the workpiece relative to the analyzing apparatus.

Apparatus and method for positioning a workpiece

A method for modeling the complex refractive index of doped, strained or ultra-thin semiconductors starts with a model for a standard bulk material which may be in any form such as a pre-existing lookup table, a dispersion model derived from an effective medium approximation (EMA) or a critical point (CP) model. The modeling method perturbs the &#x2208;curve of the bulk material by enhancing, suppressing or shifting the strong features of the curve. A Kramers-Kronig transformation is then applied to the &#x2208;perturbation to obtain the corresponding perturbation to the &#x2208;curve. The combination of the perturbed &#x2208;curve and the correspondingly perturbed &#x2208;curve are then used to obtain the complex dielectric function or complex refractive index of the modified material.

Growing community of inventors

Shrewsbury, United Kingdom

Stephen Morris