Applied Materials, Inc.

Other

Applied Material, Inc.

Stephen Moffatt

Aaron Muir Hunter

Bruce E Adams

Jiping Li

Samuel C Howells

Dean C Jennings

Timothy N Thomas

Abhilash J Mayur

Joseph Michael Ranish

Douglas Earl Holmgren

Edric Tong

Majeed Foad

Kartik Bhupendra Shah

Mark Yam

Kim Ramkumar Vellore

Paul G Carey

William Schaffer

David K Carlson

Lara Hawrylchak

Norman L Tam

Sundar Ramamurthy

Jonathan Gerald England

Leonid Mark Tertitski

James Francis Mack

Christopher Sean Olsen

Lawrence Camest West

Wolfgang R Aderhold

Nir Merry

Hiroyuki Ito

Francisco A Leon

Vishwas Kumar Pandey

Johanes F Swenberg

Dermot Cantwell

Eric Kihara Shono

Rene George

Kailash Kiran Patalay

Aaron Jacob Miller

Jose Antonio Marin

Sairaju Tallavarjula

David George Armour

Kartik Santhanam

Theodore P Moffitt

Dinesh Kanawade

Kailash Pradhan

Michael Liu

Cheng Guo

Colin Fox

Sheldon R Normand

Randhir P S Thakur

Steven Verhaverbeke

Michael Wayne Stowell, Jr

Daniel John Hoffman

Matthew S Rogers

Schubert S Chu

Errol Antonio C Sanchez

Ajit Balakrishna

Ralf Hofmann

Steve G Ghanayem

Yuichi Wada

Martin A Hilkene

Babak Adibi

Jacob Newman

Xue-Yu Qian

Matthew D Scotney-Castle

Dongming Iu

Gregory L Wojcik

Matthew Spuller

Heng Pan

Bindusagar Marath Sankarathodi

Robert J Mitchell

Thomas P Pearsall

Amikam Sade

John Boland

Kong Lung Samuel Chan

Andrew Holmes

Krishna Kumar Kuttannair

Papo Chen

Dayal Ramachandran

Jaap Van Den Berg

Amritha Rammohan

Eugene Lobanov

Per-Ove Hansson

The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Pulse train annealing method and apparatus

Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

Supplemental energy for low temperature processes

Embodiments disclosed herein include a semiconductor manufacturing tool with a hybrid model and methods of using the hybrid model for processing wafers and/or developing process recipes. In an embodiment, a method for developing a semiconductor manufacturing process recipe comprises selecting one or more device outcomes, and querying a hybrid model to obtain a process recipe recommendation suitable for obtaining the device outcomes. In an embodiment, the hybrid process model comprises a statistical model and a physical model. In an embodiment, the method may further comprise executing a design of experiment (DoE) on a set of wafers to validate the process recipe recommended by the hybrid process model.

Semiconductor processing tools with improved performance by use of hybrid learning models

Embodiments disclosed herein include a processing tool for semiconductor processing. In an embodiment, the processing tool comprises a chamber, and a plurality of witness sensors integrated with the chamber. In an embodiment, the processing tool further comprises a drift detection module. In an embodiment, data from the plurality of witness sensors is provided to the drift detection module as input data. In an embodiment, the processing tool further comprises a dashboard for displaying output data from the drift detection module.

Enhanced process and hardware architecture to detect and correct realtime product substrates

Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

Gas injector with baffle

Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Stacked pixel structure formed using epitaxy

Display screen or portion thereof with graphical user interface

Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.

Plasma-enhanced anneal chamber for wafer outgassing

The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Method of thermal processing structures formed on a substrate

Embodiments of the invention provide methods for processing a substrate within a processing chamber. In one embodiment, the method comprises providing a precursor gas mixture into the processing chamber, the precursor gas mixture comprising a deposition precursor gas and an etch precursor gas, subjecting the precursor gas mixture to a thermal energy from a heat source to deposit a material layer on a surface of the substrate, wherein the thermal energy is below the minimum required for pyrolysis of the etch precursor gas, and after the material layer is formed on the surface of the substrate, subjecting the precursor gas mixture to a photon energy from a radiation source, the photon energy having a wavelength and a power level selected to promote photolytic dissociation of the etch precursor gas over the deposition precursor gas and etch a portion of the material layer from the surface of the substrate.

Apparatus and methods for pulsed photo-excited deposition and etch

Embodiments of the disclosure provide a method and apparatus for depositing a layer on a substrate. In one embodiment, the method includes exposing a surface of the substrate disposed within a processing chamber to a fluid precursor, directing an electromagnetic radiation generated from a radiation source to a light scanning unit such that the electromagnetic radiation is deflected and scanned across the surface of the substrate upon which a material layer is to be formed, and initiating a deposition process with the electromagnetic radiation having a wavelength selected for photolytic dissociation of the fluid precursor to deposit the material layer onto the surface of the substrate. The radiation source may comprise a laser source, a bright light emitting diode (LED) source, or a thermal source. In one example, the radiation source is a fiber laser producing output in the ultraviolet (UV) wavelength range.

Apparatus and methods for photo-excitation processes

An optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.

Thermal processing apparatus

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St. Brelade, Jersey

Stephen Moffatt