University of Michigan

Ningbo Inlight Technology Co., Ltd.

Stephen Maldonado

Lingjie Jay Guo

Chengang Ji

Eli Fahrenkrug

Azhar Carim

Jhindan Mukherjee

Joshua DeMuth

Saurabh Acharya

A method of forming a structural color filter includes: depositing a first metal layer on a surface of a substrate by applying an electric potential to the substrate; depositing a first dielectric layer on the first metal layer by contacting the first metal layer with a second electrolyte; and depositing a second metal layer on the first dielectric layer. The surface of the substrate is in contact with a first electrolyte; the first electrolyte comprises a first precursor, an electrochemical reaction of the first precursor at the surface of the substrate is driven by the electric potential; the depositing the first metal layer on the surface of the substrate is performed at a temperature of less than or equal to 50&#xb0; C. The second electrolyte comprises a second precursor of a first dielectric material of the first dielectric layer.

Method for manufacturing structural color filter by electrodeposition of metal/dielectric layer/metal

Electrochemical liquid phase epitaxy (ec-LPE) processes and devices are provided that can form precipitated epitaxial crystalline films or layers on a substrate. The precipitated films may comprise a semiconductor, such as germanium, silicon, or carbon. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid metal electrode (e.g., Hg pool) near an interface region with a substrate yields a polycrystalline semiconductor material deposited as an epitaxial film. Reactor cells for use in an electrochemical liquid phase epitaxy (ec-LPE) device are also provided that include porous membranes to facilitate formation of the precipitated epitaxial crystalline films.

Devices and methods for electrochemical liquid phase epitaxy

An electrochemical liquid-liquid-solid (LLS) process that produces unlimited amounts of crystalline semiconductor, such as Ge or Si, from aqueous or polar solutions with tunable nanostructured shapes without any physical or chemical templating agent is presented. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid electrode (e.g., Hg pool) or near an electrode comprising metallic nanoparticles (e.g., In nanoparticles) yields a polycrystalline semiconductor material, as deposited. Such a process can be conducted at conditions, in a single step, and under electrochemical control, while affording control over formation of a variety of material morphologies. Materials formed by such processes are also provided.

Electrochemical liquid-liquid-solid deposition processes for production of group IV semiconductor materials

This invention provides a semiconductor having a functionalized surface that is resistant to oxidation and that includes a plurality of atoms of a Group III element bonded to organic groups. The functionalized surface has less than or equal to about 1 atom of the Group III element bonded to an oxygen atom per every 1,000 atoms of the Group III element bonded to the organic groups, as determined using X-ray photoelectron spectroscopy. This invention also provides a method of functionalizing the surface and includes the step of halogenating at least one of the plurality of atoms of the Group III element to form halogenated Group III element atoms. The method also includes the step of reacting at least one of the halogenated Group III element atoms with a Grignard reagent to form a bond between the at least one Group III element atom and the organic groups.

Growing community of inventors

Ann Arbor, MI, United States of America

Stephen Maldonado