Lam Research Corporation

Law Research Corporation

Stephen M Sirard

Diane J Hymes

Ratchana Limary

Kenji Takeshita

Andrew D Bailey, Iii

Eric A Hudson

Alan M Schoepp

Bing Ji

Robert C Hefty

Gregory Blachut

Maryam Moravej

Mayumi Block

James P DeYoung

Sean S Kang

Yang Pan

Gerardo Delgadino

David Wei

Bi-Ming Yen

Ilia Kalinovski

Daniel Le

Odette Turmel

Howard Dang

Yu Cheng

Olivier B Postel

Jeff Hahn

Jungmin Ko

Masahiro Watanabe

Formulations for forming stimulus responsive polymers (SRPs) on semiconductor substrates include organic weak acids. Methods of protecting sensitive substrates including forming an SRP layer on sensitive substrates and forming one or more cap layers on the SRP layer.

Stimulus responsive polymer films and formulations

A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.

Sacrificial protection layer for environmentally sensitive surfaces of substrates

Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving film the remaining SRP intact. The exposure and removal cycles are repeated.

Controlled degradation of a stimuli-responsive polymer film

Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures are performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching solution and/or wet cleaning solution, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The substrate is exposed to plasma generated using a plasma gas chemistry that is hydrogen rich to remove the bracing material thereby drying the substrate including the HAR structures without damaging the plurality of HAR structures.

Systems and methods for drying high aspect ratio structures without collapse using sacrificial bracing material that is removed using hydrogen-rich plasma

A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.

Method for collapse-free drying of high aspect ratio structures

Provided herein are methods of selectively etching silicon-containing block copolymer (BCP) materials. The methods involve exposing a BCP material that includes at least one silicon-containing block and at least one non-silicon-containing block to a plasma that has a reducing chemistry. The reducing plasma selectively removes the non-silicon-containing block, the silicon-containing block to be used in further processing. In some embodiments, the silicon-containing block is used as an etch mask. The reducing plasma reduces or eliminates profile bowing and undercut of the silicon-containing domains, allowing processing of high aspect ratio features. Examples of reducing chemistries include nitrogen (N), hydrogen (H), ammonia (NH), hydrazine (NH), and mixtures thereof. Also provided are apparatuses to perform the methods.

Dry development and image transfer of Si-containing self-assembled block copolymers

An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.

Substrate freeze dry apparatus and method

A method, for drying an etched layer with a plurality of structures with etched spaces between the plurality of structures is provided. A liquid is provided within the spaces on the etched layer. The liquid is displaced with a drying solution with a solvent. Some of the solvent is removed from the drying solution to form a solid from the solution, wherein the solid at least fill half the height of the etched high aspect ratio spaces. The solid is removed.

Method of collapse-free drying of high aspect ratio structures

Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material.

Systems and methods for drying high aspect ratio structures without collapse using stimuli-responsive sacrificial bracing material

An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.

Delamination drying apparatus and method

A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas.

Strip with reduced low-K dielectric damage

A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Method for low-K dielectric etch with reduced damage

A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.

Method for dielectric material removal between conductive lines

A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si&#x2014;(R)(OR'), where y&#x2267;1 and x+y=4, and wherein R is an alkyl or aryl group and R&#x2032; is an alkyl or aryl group and a second repair agent represented as Si&#x2014;(R)(OR&#x2032;)R&#x2033;, where y&#x2267;1 and x+y=3, and wherein R is an alkyl or aryl group and R&#x2032; is an alkyl or aryl group, and R&#x2033; is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

Method for tunably repairing low-k dielectric damage

A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.

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Austin, TX, United States of America

Stephen M Sirard