International Business Machines Corporation

Globalfoundries Inc.

Stephen M Lucarini

Xinhui Wang

Xinlin Wang

Felix Beaudoin

Yun-Yu Wang

Rajarao Jammy

Christopher Carr Parks

Brett H Engel

John I Kim

Karl W Barth

John D Sylvestri

Stephen K Loh

David B Riggs

George L Mack

A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Wrap-around fin for contacting a capacitor strap of a DRAM

The present invention provides a semiconducting device including a gate dielectric atop a semiconducting substrate, the semiconducting substrate containing source and drain regions adjacent the gate dielectric; a gate conductor atop the gate dielectric; a conformal dielectric passivation stack positioned on at least the gate conductor sidewalls, the conformal dielectric passivation stack comprising a plurality of conformal dielectric layers, wherein no electrical path extends entirely through the stack; and a contact to the source and drain regions, wherein the discontinuous seam through the conformal dielectric passivation stack substantially eliminates shorting between the contact and the gate conductor. The present invention also provides a method for forming the above-described semiconducting device.

Barrier dielectric stack for seam protection

A apparatus and method for determining minimum line widths of free standing structures built by a semiconductor (S/C) manufacturing process. Free standing structures are created in a semiconductor device and subjected to an aerosol process which is tuned and centered with respect to a critical line width for the free standing structures. The S/C manufacturing process is tuned responsive to failure of free standing structures of sub-critical line widths.

System and method for determining line widths of free-standing structures resulting from a semiconductor manufacturing process

A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.

Process for removing dopant ions from a substrate

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Pleasant Valley, NY, United States of America

Stephen M Lucarini