Air Products and Chemicals, Inc.

Stephen M Fine

Paul N Dyer

Michael Francis Carolan

Robin Edward Richards

Leslie E Schaffer

Alexander Makitka, Iii

Diwakar Garg

David A Roberts

Arthur Kenneth Hochberg

Robert M Thorogood

Andrew David Johnson

John A Norman

John Giles Langan

David A Bohling

Andre Lagendijk

James M LaBar, Sr

The present invention is a method for manufacturing inorganic membranes which are capable of separating oxygen from oxygen-containing gaseous mixtures. The membranes comprise a porous composite of a thin layer of a multicomponent metallic oxide which has been deposited onto a porous support wherein the pores of the multicomponent metallic oxide layer are subsequently filled or plugged with a metallic-based species. The inorganic membranes are formed by depositing a porous multicomponent metallic oxide layer onto the porous support to form a porous composite having a network of pores capable of transporting gases. The network of pores are plugged or filled by organometallic vapor infiltration to form an inorganic membrane having essentially no through porosity.

Inorganic membranes

The present invention is a process of removal of moisture from surfaces, such as metal conduit for transmission of high purity gases in electronic component fabrication facilities, and the passivation of such metal surfaces to retard the readsorption of moisture, wherein the moisture removal and passivation is enhanced using an agent of the formula: R.sub.a SiX.sub.b Y.sub.c Z.sub.d where a =1-3; b, c, and d are individually 0-3 and a+b+c+d=4; R is one or more organic groups; and at least one of X, Y or Z have a bond to silicon that is readily hydrolyzable. The moisture removal and passivation is conducted at less than 65.degree. C. and at least ambient pressure.

Moisture removal and passivation of surfaces

The present invention is a method for the simultaneous codeposition of copper and aluminum from volatile copper and aluminum precursors to form a layer on a substrate under chemical vapor phase conditions, such as the metallization of an aluminum/(0.25-4% copper) layer on a silicon semiconductor electronic device.

Process for chemical vapor codeposition of copper and aluminum alloys

A method of depositing tungsten films comprising heating a substrate to a temperature above 200.degree. C. in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF.sub.6 and organohydrosilanes into the reactor.

Deposition of tungsten films from mixtures of tungsten hexafluoride

Method for manufacturing inorganic membranes by organometallic chemical

An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl-.beta.-diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200.degree. C.

Process for selectively depositing copper aluminum alloy onto a substrate

The invention is a process for recovering oxygen from an oxygen-containing gaseous mixture containing one or more components selected from water, carbon dioxide or a volatile hydrocarbon which process utilizes ion transport membranes comprising a multicomponent metallic oxide containing barium. The process utilizes a temperature regime which overcomes problems associated with degradation of barium-containing multicomponent oxides caused by carbon dioxide.

Process for recovering oxygen from gaseous mixtures containing water or

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Emmaus, PA, United States of America

Stephen M Fine