Globalfoundries Inc.

Stephen Kronholz

Markus Lenski

Vassilios Papageorgiou

Performance of P-channel transistors may be enhanced on the basis of an embedded strain-inducing semiconductor alloy by forming a gate electrode structure on the basis of a high-k dielectric material in combination with a metal-containing cap layer in order to obtain an undercut configuration of the gate electrode structure. Consequently, the strain-inducing semiconductor alloy may be formed on the basis of a sidewall spacer of minimum thickness in order to position the strain-inducing semiconductor material closer to a central area of the channel region.

Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode

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Dresden, Germany

Stephen Kronholz