Motorola Corporation

Stephen Kent Rockwell

Rudy Michael Emrick

Steven James Franson

Bruce Bosco

John E Holmes

A bi-directional transceiver () having reduced circuitry and that may be formed on a non-semiconductor substrate includes impedance matching and filtering circuitry () coupled to a non-linear diode () for converting a lower frequency modulated signal to a higher frequency RF transmit signal and to function as a square-law detector to envelope detect RF signals. The non-linear diode () includes, in one exemplary embodiment, at least two insulative layers disposed between two conductive layers, wherein a quantum well is formed between the insulators that allows only high-energy tunneling.

Integrated bidirectional junction engineered dual insulator transceiver

A device () is provided for matching the CTE between substrates (), e.g., a semiconductor substrate and packaging material. The first substrate () has a first coefficient of thermal expansion and the second substrate () has a second coefficient of thermal expansion. At least two layers () of liquid crystal polymer are formed between the first substrate () and the second substrate (), each layer having a unique coefficient of thermal expansion progressively higher in magnitude from the first substrate () to the second substrate ().

Graded liquid crystal polymer package

A packaging structure () is provided having a hermetic sealed cavity for microelectronic applications. The packaging structure () comprises first and second packaging layers () forming a cavity. Two liquid crystal polymer (LCP) layers () are formed between and hermetically seal the first and second packaging layers (). First and second conductive strips () are formed between the LCP layers () and extend into the cavity. An electronic device () is positioned within the cavity and is coupled to the first and second conductive strips ().

Hermetic cavity package

A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Once such a structure is built, a high electron mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT) can be constructed on the structure. A HEMT or HBT of the above structure can then be used in a switch or in an amplifier.

Growing community of inventors

Mesa, AZ, United States of America

Stephen Kent Rockwell