Hrl Laboratories, LLC

Stephen K Lam

Wei L Yi

Jack A Crowell

Xiwei Bai

Elias A Flores

Kenneth K Tsang

A vanadium dioxide (VO)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 10switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage Vspreading of less than about 25%. The threshold switch device may be included in an oscillator circuit to produce an astable oscillator that may serve as a functional building block in spiking-neuron based neuromorphic computing.

Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance

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Los Angeles, CA, United States of America

Stephen K Lam