Oclaro Technology Limited

Lumentum Technology UK Limited

Lumentum Operations LLC

Stephen K Jones

Robert Anthony Griffin

Neil David Whitbread

Karl M Kissa

John M Heaton

David Glassner

Andrew John Ward

Andrew Cannon Carter

Adrian Perrin Janssen

Paul Firth

Colin Smith

Peter John Williams

Richard Beanland

Ian Juland

A waveguide structure for use in a balanced push-pull Mach Zehnder modulator. The waveguide structure comprises a plurality of layers. The layers comprise, in order: an insulating or semi-insulating substrate; an lower cladding layer; an waveguide core layer; and an upper cladding layer. The lower cladding layer, waveguide core layer, and upper cladding layer are etched to form: a signal waveguide and a ground waveguide, which are connected via the lower cladding layer; and a signal line and a ground line, each located adjacent to the respective waveguide, and each connected to the respective waveguide via one or more respective resistive structures connected in the plane of the lower cladding layer.

RF chirp reduction in MZ modulator

An electrical-optical modulator may include one or more optical waveguides to propagate one or more optical signals in a direction of propagation. An optical waveguide of the one or more optical waveguides may include a time delay section, a first modulation section preceding the time delay section in the direction of propagation, and a second modulation section following the time delay section in the direction of propagation. The first modulation section and the second modulation section may be configured to be associated with opposite modulation polarities, and the time delay section may be configured to delay a phase of the one more optical signals relative to the first modulation section. The electrical-optical modulator may include one or more signal electrodes to propagate one or more signals in the direction of propagation in order to modulate the one or more optical signals through electrical-optical interaction.

Electrical-optical modulator

An electrical-optical modulator may include a first section configured for a first electrical-optical interaction between one or more optical waveguides and one or more signal electrodes. The electrical-optical modulator may include a second section configured to increase or decrease a relative velocity of signals of the one or more signal electrodes to optical signals of the one or more optical waveguides relative to the first section. The electrical-optical modulator may include a third section configured for a second electrical-optical interaction between the one or more optical waveguides and the one or more signal electrodes according to an opposite modulation polarity relative to the first section.

The invention relates to optical modulation devices and, in particular, monolithically integrated optical modulation devices. Disclosed herein is a monolithically integrated optical modulation device () that comprises: an input optical port (); an output optical port (); and an optical waveguide for guiding light from the input optical port to the output optical port. A portion of the optical waveguide is split into at least two branches. The waveguide is configured to cause a net 180&#xb0; change in direction of the light while guiding said light from the input optical port to the output optical port such that the input optical port and the output optical port are positioned on a first edge of the device. At least some of the net 180&#xb0; change in direction is achieved within the branches of the waveguide.

Optical modulation device

A method of providing electrical isolation between subsections in a waveguide structure for a photonic integrated device, the structure comprising a substrate, a buffer layer and a core layer, the buffer layer being located between the substrate and the core and comprising a dopant of a first type, the first type being either n-type or p- type, the method comprising the steps of prior to adding any layer to a side of the core layer opposite to the buffer layer: selecting at least one area to be an electrical isolation region, applying a dielectric mask to a surface of the core layer opposite to the buffer layer, with a window in the mask exposing an area of the surface corresponding to the selected electrical isolation region, implementing diffusion of a dopant of a second type, the second type being of opposite polarity to the first type, and allowing the dopant of the second type to penetrate to the substrate to form a blocking junction.

Electrical isolation in photonic integrated circuits

An optical waveguide arrangement is provided which comprises an active ridge waveguide structureformed by etching of a semiconductor substrate. There is also provided an auxiliary waveguide-like structureformed on the substrate adjacent the active ridge waveguide structureto control the etched profile of the active waveguide structure. The arrangement of the auxiliary structureon the substrate controls the etched profile over the cross-section of the active waveguide structureand along the length of the active waveguide structure. Advantageously, this arrangement reduces or eliminates the disadvantages associated with etch-process induced asymmetries in the shape of closely spaced waveguides.

Optical waveguide arrangements comprising an auxiliary waveguide-like structure

Optical devices are disclosed consisting of optical chips (planar lightwave circuits) which have optically symmetric or matching designs and properties and optical components which create asymmetry in the optical devices. The devices find application in detection in coherent and non-coherent optical communications systems.

Optical chips and devices for optical communications

A metallization on a semiconductor substrate is disclosed in the form of a laminate comprising a plurality of layers of a 'conducting' metallization for providing electrical conductivity, interspersed with a plurality of layers of another metallization. By providing many layers the thickness of each individual layer can be reduced. Reduction in thickness of each layer leads to a reduction in grain size and a consequent reduction in creep over the lifetime of a device.

Growing community of inventors

Northampton, United Kingdom

Stephen K Jones