Seagate Technology Incorporated

Stephen John Wrazien

Tong Zhao

Joachim Walter Ahner

Florin Zavaliche

Martin Gerard Forrester

Shan Hu

Kevin Arthur Gomez

Walter Richard Eppler

Mark David Bedillion

Xiangjun Feng

Inci Ozgunes

A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.

Reconfigurable electric circuitry and method of making same

A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.

Non-destructive read back for ferroelectric data storage device

A data storage system includes a storage medium having a plurality of data sectors and a head that communicates with the data storage medium. The head produces a readback signal when reading information from the data storage medium. A computation unit extracts a distortion component of the readback signal and generates a position error signal from the distortion component.

Generating PES using readback signal distortion

Growing community of inventors

Cranberry Township, PA, United States of America

Stephen John Wrazien