Nxp B.v.

Stephen John Sque

Johannes Josephus Theodorus Marinus Donkers

Jan Sonsky

Da-Wei Lai

Andreas Bernardus Maria Jansman

Tim Boettcher

Jeroen Antoon Croon

Markus Mueller

Stephan Heil

Godefridus Adrianus Maria Hurkx

Maarten Jacobus Swanenberg

Jan Claes

Wilhelmus Cornelis Maria Peters

Godefridus Andrianus Maria Hurkx

An ESD protection device including a PNP transistor connected to an input pad, a diode connected to the PNP transistor and connected to an output pad, and an NMOS transistor connected to the PNP transistor and the output pad, wherein the diode, PNP transistor, and NMOS transistor are configured to route different levels of an electrostatic discharge (ESD) current pulse from the input pad to the output pad.

Gate-lifted NMOS ESD protection device

Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.

Electrostatic discharge protection apparatuses

Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Heterojunction semiconductor device and manufacturing method

Heterojunction semiconductor device with conductive barrier portion and manufacturing method

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Veldhoven, Netherlands

Stephen John Sque