University of Florida Research Foundation Inc

Stephen John Pearton

Fan Ren

Tanmay P Lele

Hung-Ta Wang

Barbara Jane Sheppard

Soohwan Jang

Yu-Lin Wang

Byoung-Sam Kang

Jihyun Kim

Andrew Gabriel Rinzler

Jenshan Lin

David P Norton

Sunwoo Jung

Mark E Law

Cammy Rene Abernathy

Ya-Hsi Hwang

Yoshihiro Irokawa

Various examples are provided for low cost disposable medical sensors fabricated on glass, paper or plastics, and applications thereof. In one example, a medical sensor includes a base structure comprising a functionalized sensing area; and a transistor disposed on the base structure adjacent to the functionalized sensing area. In another example, a medical sensor includes a base structure comprising a functionalized sensing area disposed on a first electrode pad and a reference sensing area disposed on a second electrode pad separated from the first electrode pad; and a transistor having a gate electrically coupled to the second electrode pad of the base structure. A gate pulse applied to the functionalized sensing can produce a drain current corresponding to an amount of a target present in a sample disposed on the base structure.

Low cost disposable medical sensor fabricated on glass, paper or plastics

Materials and methods for improving the DC and RF performance of off-state step-stressed high electron mobility transistors (HEMTs) and devices are provided. A semiconductor device can include at least one HEMT and an on-chip heating source. A method of recovering the DC and RF performance of a stressed semiconductor device can include annealing the device with a built-in heating source of the device.

Self-healing semiconductor transistors

Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WOand AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).

Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor

III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.

High electron mobility transistors with improved heat dissipation

A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.

Water-insensitive gas sensor using polymer-encapsulated Pt&#x2014;AlGaN/GaN diodes

Embodiments of the present Invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.

Wireless based marine pathogens detection system

Embodiments of the present invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.

Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs.

Materials and methods for detecting toxins, pathogens and other biological materials

Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

Sensors using high electron mobility transistors

High electron mobility transistors (HEMTs) having improved I-V characteristics and reliability are provided. According to one embodiment, a selective implantation is performed to form a damage region in a gate-to-drain region of, for example, an I&#x3b7;A&#x393;N/GaN HEMT. The selective implantation can be performed by irradiating some or all of a gate-to-drain region of an InAlN/GaN HEMT on a substrate with protons or other ions such as Ge ions, He ions, N ions, or O ions. The damage region can extend in a region below a 2DEG interface of the HEMT.

High electron mobility transistors having improved reliability

A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In one application, the HEMTs can be used for the measurement and detection of chloride in bio-sensing applications. In another application, the HEMTs can be used for the detection of chloride in water for environmental and health applications.

Chloride detection

Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

Exemplary embodiments provide a self-powered wireless gas sensor system and a method for gas sensing using the system. The system can be used to detect and constantly track a presence of various gases including hydrogen, ozone and/or any hydrocarbon gas, and remotely transmit the sensing signal. The system can include a low power gas sensor that consumes less than about 30 nano-watts of power. As a result, the system can detect the presence of hydrogen at about 10 ppm. The sensor can also provide a fast response time of about 1-2 seconds. In various embodiments, the system can be physically small and packaged with all components assembled as a single compact unit.

System for hydrogen sensing

A high electron mobility transistor (HEMT) capable of performing as a COor Osensor is disclosed, hi one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.

Growing community of inventors

Gainesville, FL, United States of America

Stephen John Pearton