Northern Telecom Limited

Nortel Networks Corporation

Sige Microsystems Inc.

Nothern Telecom Limited

Stephen J Kovacic

Jugnu J Ojha

Thomas W Macelwee

John Ilowski

William Kung

Duljit S Malhi

Derek C Houghton

M Jamal Deen

A method and apparatus is provided for locating with improved vertical positioning accuracy a discrete element on a semiconductor optoelectronic integrated circuit. The method employs an etch stop layer located beneath a series of semiconductor layers. The semiconductor layers may include waveguides to couple light between integrated or discrete elements. Pits with accurate depth are etched in the semiconductor layers down to the etch stop layer. Accurate alignment between a discrete element and another element is made possible by controlling their respective distances from the etch stop layer.

Method for the hybrid integration of discrete elements on a semiconductor substrate

A method of producing a bipolar transistor includes the step of providing a sacrificial mesa over a layer of SiGe in order to prevent a polysilicon covering layer from forming over a predetermined region of the SiGe layer forming the transistor base. After an etching process removes the sacrificial mesa and the SiGe layer is exposed, an oppositely doped material is applied over top of the SiGe layer to form an emitter. This makes it possible to realize a thin layer of silicon germanium to serve as the transistor base. This method prevents the base layer SiGe from being affected, as it otherwise would be using a conventional double-poly process.

Method of producing a SI-GE base heterojunction bipolar device

Method for the hybrid integration of discrete elements on a

A channel waveguide structure which can be incorporated into VLSI (very large scale integration) integrated circuits uses a SiGe (silicon germanium) alloy core and Si (silicon) top and bottom cladding layers. The core may consist of only a SiGe alloy layer or it may be formed as a superlattice containing Si layers alternating with SiGe alloy layers. LOCOS (locally oxidized silicon) regions are formed on the top cladding layer at spaced locations thereby defining lateral boundaries of channels in the core.

Semiconductor optical waveguide

Complementary Modulation-Doped Field-Effect Transistors (CMODFETs) using a heterostructure based on Silicon and Germanium alloys are described. The design of the Si/Si.sub.1-x Ge.sub.x -based CMODFET is also presented and shown to enable both n-channel or p-channel transport between source and drain implantation regions of the carriers with mobilities enhanced by 1) low ionized dopant scattering phenomena and 2) discretization of the free carrier energy due to quantum confinement.

Method of manufacturing complementary modulation-doped field effect

A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect transistor and lateral bipolar transistor, i.e. a lateral bipolar transistor having base, emitter and collector terminals and a fourth terminal for controlling a gate electrode overlying an active base region. The device is operable as an electronically configurable lateral transistor. Advantageously a heavily doped buried layer provides a base electrode having a base contact which surrounds and encloses the collector. The surface region between emitter and collector is characterized by lightly doped regions adjacent and contiguous with the heavily doped emitter and collector, which effectively reduce the base width of the bipolar transistor and improve operation for analog applications.

Gate controlled lateral bipolar junction transistor

A method and apparatus are provided for coupling light from a fiber to a waveguide on an OEIC (optoelectronic integrated circuit). The region of the fiber to be connected is made into a D-fiber by removing a portion of its cladding. The flat surface is fused to a silicon dioxide coated portion of the waveguide. The light in the fiber is evanescently coupled into the waveguide on the OEIC which is typically a planar or channel waveguide.

Method for low-loss insertion of an optical signal from an optical fibre

Complementary Modulation-Doped Field-Effect Transistors (CMODFETs) using a heterostructure based Silicon and Germanium alloys are described. The design of the Si/Si.sub.1-x Ge.sub.x -based CMODFET is also presented and shown to enable both n-channel or p-channel transport between source and drain implantation regions of the carriers with mobilities enhanced by 1) low ionized dopant scattering phenomena and 2) discretization of the free carrier energy due to quantum confinement.

Complementary modulation-doped field-effect transistors

A lateral bipolar transistor is provided in which the active base region comprises a layer of a material providing a predetermined valence band offset relative to the emitter and collector regions, to enhance transport of carriers from the emitter to the collector in a lateral manner. In particular, a silicon hetero-junction lateral bipolar transistor (HLBT) is provided. The lateral bipolar transistor structure and method of fabrication of the transistor is compatible with a bipolar-CMOS integrated circuit. Preferably the base region comprises a silicon-germanium alloy or a silicon-germanium superlattice structure comprising a series of alternating layers of silicon and silicon-germanium alloy.

Growing community of inventors

Kanata, Canada

Stephen J Kovacic