Intel Corporation

Micron Technology Incorporated

Other

Ovonyx Inc.

Stephen H Tang

Vivek K De

Dinesh Somasekhar

Muhammad M Khellah

Yibin Ye

Fabrice Paillet

Ali Keshavarzi

Hernan Adolfo Castro

Shih-Lien L Lu

James W Tschanz

Stephen W Russell

Siva G Narendra

Jeremy Miles Hirst

Mohsen Alavi

Innocenzo Tortorelli

Christina Papagianni

Gerhard Schrom

Derchang Kau

Brian S Doyle

Suman Datta

Victor Zia

Badarinath N Kommandur

Zachary Keer

Tanay Karnik

Charles C Kuo

Peter Hazucha

Steven Hsu

Richard Keith Dodge

Robert J Gleixner

Zhongyuan Lu

Timothy C Langtry

Alavi Mohsen

Methods and apparatuses for thin film transistors and related fabrication techniques are described. The thin film transistors may access two or more decks of memory cells disposed in a cross-point architecture. The fabrication techniques may use one or more patterns of vias formed at a top layer of a composite stack, which may facilitate building the thin film transistors within the composite stack while using a reduced number of processing steps. Different configurations of the thin film transistors may be built using the fabrication techniques by utilizing different groups of the vias. Further, circuits and components of a memory device (e.g., decoder circuitry, interconnects between aspects of one or more memory arrays) may be constructed using the thin film transistors as described herein along with related via-based fabrication techniques.

Memory array decoding and interconnects

Methods, systems, and devices for buried lines and related fabrication techniques are described. An electronic device (e.g., an integrated circuit) may include multiple buried lines at multiple layers of a stack. For example, a first layer of the stack may include multiple buried lines formed based on a pattern of vias formed at an upper layer of the stack. The pattern of vias may be formed in a wide variety of spatial configurations, and may allow for conductive material to be deposited at a buried target layer. In some cases, buried lines may be formed at multiple layers of the stack concurrently.

Buried lines and related fabrication techniques

Methods and apparatuses for a cross-point memory array and related fabrication techniques are described. The fabrication techniques described herein may facilitate concurrently building two or more decks of memory cells disposed in a cross-point architecture. Each deck of memory cells may include a plurality of first access lines (e.g., word lines), a plurality of second access lines (e.g., bit lines), and a memory component at each topological intersection of a first access line and a second access line. The fabrication technique may use a pattern of vias formed at a top layer of a composite stack, which may facilitate building a 3D memory array within the composite stack while using a reduced number of processing steps. The fabrication techniques may also be suitable for forming a socket region where the 3D memory array may be coupled with other components of a memory device.

Cross-point memory array with access lines

Thin film transistors and related fabrication techniques

Cross-point memory array and related fabrication techniques

Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

Apparatuses and methods including memory and operation of same

Methods and systems include memory devices with multiple memory cells configured to store data. The memory devices also include a cache configured to store at least a portion of the data to provide access to the at least the portion of the data without accessing the multiple memory cells. The memory devices also include control circuitry configured to receive a read command having a target address. Based on the target address, the control circuitry is configured to determine that the at least the portion of the data is present in the cache. Using the cache, the control circuitry also outputs read data from the cache without accessing the plurality of memory cells.

Read cache for reset read disturb mitigation

Apparatuses, memories, and methods for decoding memory addresses for selecting access lines in a memory are disclosed. An example apparatus includes an address decoder circuit coupled to first and second select lines, a polarity line, and an access line. The first select line is configured to provide a first voltage, the second select line is configured to provide a second voltage, and the polarity line is configured to provide a polarity signal. The address decoder circuit is configured to receive address information and further configured to couple the access line to the first select line responsive to the address information having a combination of logic levels and the polarity signal having a first logic level and further configured to couple the access line to the second select line responsive to the address information having the combination of logic levels and the polarity signal having a second logic level.

Apparatuses, memories, and methods for address decoding and selecting an access line

Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Apparatuses, devices and methods for sensing a snapback event in a circuit

Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

Via formation for cross-point memory

Growing community of inventors

Pleasanton, CA, United States of America

Stephen H Tang