The University of Manchester

Imperial Chemical Industries Limited

Avecia Limited

Merck Patent Gmbh

Fujifilm Imaging Colorants, Inc.

Zeneca Limited

Hewlett-packard Development Company, L.p.

Ici Americas, Inc.

Covion Organic Semiconductors Gmbh

Ici Resins Bv

Stephen G Yeates

John Christopher Padget

Tom Annable

Richard Winpenny

Scott Lewis

Gerardus C Overbeek

Mark Holbrook

Janos Veres

David A Pears

Mark Kenworthy

Simon Dominic Ogier

Neil Anthony Tallant

Kevin Johnson

John Patrick O'Donnell

Hubert Spreitzer

Susanne Heun

Paul Wight

John D Schofield

Stuart N Richards

Stephen William Leeming

David Alan Pears

Kevin E Treacher

Beverley Anne Brown

Barry Huston Meyrick

Richard G Coogan

John David Payne

Rajasingham Satgurunathan

David C Hinde

Paul Francis Mahon

Gordon Ellis

Mary R Marsh

Beverly Brown

Denise Hall

Domenico Carlo Cupertino

Philip MacFaul

Antonio Fernandez

David Cottrell

Anita Margaret De La Motte

The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

Electron beam resist composition

The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

Secondary electron generating composition

The present invention relates to resist compostions, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.

Resist composition

The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimizes scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

A process for preparing a modified particulate solid comprising reacting a dispersant with a compound in the presence of a particulate solid and a liquid medium, characterised in that: The process provides a modified particulate solid having improved stability which is particularly useful for liquid vehicles having and range of polarities and for incorporation into ink jet printing inks.

Dispersant-encapsulated particulate solids

This invention relates to organic light emitting diodes (OLEDs) and to methods for their manufacture. The invention provides an OLED element or display which enables contrast to be produced in an image. In accordance with the invention a layer of ink is patterned as a blocking layer between two OLED layers. The ink reduces or prevents conduction, i.e. movement of charge, between the two OLED layers in that area of the device. The ink may be dark in color, e.g. black, to increase the contrast ratio of the OLED. The blocking layer is provided between any two layers in the OLED and blocks the charge movement in these areas. The blocking layer may comprise a multiplicity of ink dots, the density of which determines the extent to which conduction is hindered. The blocking layer may be produced as a 'grey-scale' pattern wherein the density of dots is varied across the pattern.

Organic light emitting diodes

A method for forming an organic electronic device, which method comprises the steps of: The method allows the formation of a device structure wherein the device layers to be patterned are self-aligned. The method enables a multiplicity of layers to be patterned in a single set of printing and lift-off steps using one pattern which ensures the excellent vertical alignment of edges, which would be difficult to achieve by direct printing. Horizontal alignment can also be achieved. The size of the device features can be reduced below the actual printing resolution. Examples of organic electronic devices include OFETs, OLEDs, memory, sensing elements, solar cells, photo-sensors, photoreceptors for electrophotography and the like.

Organic electronic devices

An ink-jet printing process comprising the steps (a) and (b) in any order or simultaneously: (a) applying an ink to a substrate by means of an ink-jet printer to form an image on a substrate; and (b) applying to the substrate a fixing composition comprising a liquid medium and a polymer containing a plurality of monoguanide and/or biguanide groups by means of an ink jet printer; characterised in that in the fixing composition has a chloride concentration less than 400 ppm by weight.

Compositions and processes

The present invention relates to solutions of organic semiconductors and their use in the production of electronic components.

Solutions of organic semiconductors that contain additives

A process for forming a chain extended thermoplastic polymer which includes reacting: (i) a prepolymer having one or more guanidinium or biguanidinium units and having at least one reactive end group; and (ii) a chain extender having at least two groups able to react with reactive end group(s) in (i). The polymer used as fixing agent to reduce highlighter smear of prints prepared by ink jet printing.

Process for preparing chain extended thermoplastic guanidinium polymers

A coating composition comprising pigment, medium and a binder characterised in that (i) the binder comprises a cationic polymer comprising a repeat unit of Formula (1): wherein:

Composition and media

A field effect transistor in which a continuous semiconductor layer comprises:

Field effect transistors and materials and methods for their manufacture

A composition comprising water-dissipatable polyurethane, water, colorant, a water-miscible organic solvent and a water-immiscible organic solvent. The compositions are useful as inks for ink jet printers.

Composition based on water-dissipatable polyurethane

Growing community of inventors

MacClesfield, United Kingdom

Stephen G Yeates