Globalfoundries Inc.

Stephen E Greco

Roger Allan Quon

Atsushi Ogino

Jim S Liang

A first aspect of the disclosure provides for an integrated circuit structure. The integrated circuit structure may comprise a first metal structure in a first dielectric layer on a substrate in a crack stop area; and a first crack stop structure in a second dielectric layer, the first crack stop structure being over the first metal structure and including: a first metal fill contacting the first metal structure; and an air seam substantially separating the first metal fill and the second dielectric layer.

Integrated circuit structure with crack stop and method of forming same

Embodiments of the present disclosure provide an integrated circuit (IC) structure with a metal crack stop and methods of forming the same. An IC structure according to embodiments of the present disclosure can include an insulator positioned over a substrate; a barrier film positioned over the insulator; an interlayer dielectric positioned over the barrier film; and a metal crack stop positioned over the substrate and laterally adjacent to each of the insulator, the barrier film, and the interlayer dielectric, wherein the metal crack stop includes a sidewall having a first recess therein, and wherein a horizontal interface between the barrier film and the interlayer dielectric intersects the sidewall of the metal crack stop.

Growing community of inventors

Stamford, CT, United States of America

Stephen E Greco