Applied Materials, Inc.

Monsanto Technology LLC

Winfield Solutions, LLC

Stephen Donald Prouty

Andreas Schmid

Andrew Antoine Noujaim

Steven E Babayan

Nicholas Koshnick

Michael John Preiner

Justin White

Alvaro Garcia De Gorordo

Yogananda Sarode Vishwanath

Sumanth Banda

Martin Perez-Guzman

Bevan Gerber-Siff

Robert Tirrell

Rajinder Dhindsa

Vladimir Knyazik

Jonathan Simmons

Álvaro García De Gorordo

Vijay D Parkhe

Shahid Rauf

Phillip A Criminale

Denis M Koosau

Daniel Sang Byun

Roland R Smith

Shih-Ying Huang

Anthony Huang

Steven Joseph Larosa

An electrical connector for a substrate support assembly is disclosed herein. The electrical connector includes a first interface body, and a second interface body coupled to the first interface body and to a third interface body. The second interface body is circumscribed by the third interface body. The first interface body and the second interface body each comprise a plurality of electrical terminals disposed in sockets formed in the respective first and second interface bodies, each electrical terminal disposed in sockets of the first interface body coupled to a respective one of the electrical terminals disposed in sockets of the second interface body to form a plurality of isolated conductive electrical unions, wherein the second interface body includes a plurality of protruding sidewalls that extend into the first interface body between each of the electrical terminals of the first interface body.

Electrical connector for cooled substrate support assembly

Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

Condition selectable backside gas

A substrate support assembly is described herein that includes a facility plate, a ground plate coupled to the facility plate, a fluid conduit disposed within the substrate support assembly disposed through the facility plate and the ground plate, and a connector coupled to the ground plate that houses a portion of the fluid conduit. The connector includes a biasing assembly and a fastener disposed in a pocket formed in the ground plate.

Cooled substrate support assembly for radio frequency environments

Semiconductor substrate support assemblies may include an electrostatic chuck body having a substrate support surface. The electrostatic chuck body may define a plurality of protrusions extending from the substrate support surface. The assemblies may include an electrode embedded within the electrostatic chuck body. The electrode may define apertures through the electrode in line with the plurality of protrusions extending from the substrate support surface.

Reduced localized force in electrostatic chucking

Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

In-situ apparatus for semiconductor process module

Embodiments described herein relate to a substrate support assembly which enables adjustment of the thermal conductivity therein. The substrate support assembly has heater and cooling channel. An adjustable thermal break disposed between the heater and the cooling channel. The adjustable thermal break has one or more fluid conduits coupled thereto and configured to flow a fluid into and out of the adjustable thermal break for variant the thermal conductivity between the heater and the cooling channel.

Adjustable thermal break in a substrate support

A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned in a groove formed in the cooling base and configured to form a seal between the cooling base and one or both of the porous plug and the body of the electrostatic chuck.

Substrate support carrier with improved bond layer protection

Semiconductor chamber components are described herein that includes one or more conduits for carrying a fluid between powered and grounded portions of the chamber component, the conduit configure to be less prone to arcing as compared to conventional components. In one example, a semiconductor chamber component is provided that includes a powered region, a grounded region, and a fluid conduit. The fluid conduit is disposed within the semiconductor chamber component and passes through the powered and grounded regions. The fluid conduit has an end to end electrical resistance of between 0.1 to 100 M&#x3a9;.

Substrate support assembly with arc resistant coolant conduit

Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assembly with a vacuum region therebetween, and a seal assembly. The seal assembly includes an upper flange coupled to the base channel of the ESC base assembly, the upper flange disposed in the facility plate, a lower flange coupled to the upper flange, the lower flange disposed in the facility plate, a gasket disposed between the upper flange and the lower flange, and an insulator tube coupled to the lower flange. A passage is connected to the base channel, the passage is defined by connected openings of the upper flange, the gasket, the lower flange, the insulator tube, and the base assembly.

Semiconductor processing with cooled electrostatic chuck

The systems and methods discussed herein are associated with substrate support pedestals used in processing chambers to manufacture semiconductors, electronics, optics, and other devices. The substrate support pedestals include an electrostatic chuck body bonded to a cooling base via a bond layer. A gas flow passage is formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base, and a porous plug is positioned in the gas flow passage. The gas flow passage passes through a hole in the bond layer and the porous plug and has a swept volume physically shielded from an inside edge of the hole in the bond layer, protecting the bond layer from erosion.

Substrate support pedestal

Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a refrigerant channel disposed therein, and a facility plate having a coolant channel disposed therein. The facility plate includes a plate portion and a flange portion. The plate portion is coupled to the ESC base assembly and the flange portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the flange portion of the facility plate, and the seal assembly.

Cryogenic electrostatic chuck

A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.

Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a base channel disposed therein, and a facility plate having a facility channel disposed therein. The facility plate includes a plate portion and a wall portion. The plate portion is coupled to the ESC base assembly and the wall portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the wall portion of the facility plate, and the seal assembly.

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San Jose, CA, United States of America

Stephen Donald Prouty